IRFI4227PbF Features HEXFET Power MOSFET Advanced Process Technology Key Parameters Key Parameters Optimized for PDP Sustain, Vmax 200 V Energy Recovery and Pass Switch Applications DS Low E Rating to Reduce Power PULSE V typ. 240 V DS (Avalanche) Dissipation in PDP Sustain, Energy Recovery R typ. 10V 21 m DS(ON) and Pass Switch Applications Low Q for Fast Response G I max T = 100C 47 A RP C High Repetitive Peak Current Capability for T max 150 C J Reliable Operation Short Fall & Rise Times for Fast Switching 150C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability S D G TO-220 Full-Pak G D S Gate Drain Source Description This HEXFET Power MOSFET is specifically designed for Sustain Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFI4227PbF TO-220 Full-Pak Tube 50 IRFI4227PbF Absolute Maximum Ratings Symbol Parameter Max. Units V Gate-to-Source Voltage 30 GS V I T = 25C Continuous Drain Current, V 10V 26 D C GS I T = 100C Continuous Drain Current, V 10V 17 D C GS A I Pulsed Drain Current 100 DM I T = 100C Repetitive Peak Current 47 RP C P T = 25C Maximum Power Dissipation 46 W D C T = 100C Maximum Power Dissipation 18 P D C Linear Derating Factor 0.37 W/C T Operating Junction and J -40 to + 150 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 2.73 R JC C/W Junction-to-Ambient 65 R JA 1 2017-04-27 IRFI4227PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 240 mV/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 21 25 m V = 10V, I = 17A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V GS(th) V = V , I = 250A DS GS D Gate Threshold Voltage Temp. Coefficient -11 mV/C V T GS(th)/ J 20 A V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 1.0 mA V = 200V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Trans conductance 47 S V = 25V, I = 17A DS D Q Total Gate Charge 73 110 I = 17A,V = 100V g D DS nC Q Gate-to-Drain Charge 21 V = 10V GS gd t Turn-On Delay Time 17 V = 100V, V = 10V d(on) DD GS t Rise Time 19 I = 17A r D ns t Turn-Off Delay Time 11 R = 2.5 d(off) G t Fall Time 29 See Fig. 22 f t Shoot Through Blocking Time 100 ns V = 160V,V = 15V,R = 4.7 st DD GS G L = 220nH, C = 0.4F, V = 15V GS 570 V = 160V, R = 4.7 T = 25C DD G J E Energy per Pulse J PULSE L = 220nH, C = 0.4F, V = 15V GS 910 V = 160V, R = 4.7 T = 100C DD G J C Input Capacitance 4600 V = 0V iss GS C Output Capacitance 460 V = 25V oss DS pF C Reverse Transfer Capacitance 91 = 1.0MHz rss C eff. Effective Output Capacitance 360 V = 0V, V = 20V to 160V oss GS DS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact Avalanche Characteristics Typ. Max. Units Parameter E Single Pulse Avalanche Energy 54 AS mJ E 4.6 Repetitive Avalanche Energy AR V Repetitive Avalanche Voltage 240 V DS(Avalanche) I 16 Avalanche Current A AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I T = 25C 26 S C (Body Diode) showing the A Pulsed Source Current integral reverse I 100 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 17A,V = 0V SD J S GS t Reverse Recovery Time 93 140 ns T = 25C ,I = 17A, V = 50V rr J F DD Q Reverse Recovery Charge 350 520 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. starting T = 25C, L = 0.44mH, R = 25 , I = 16A. J G AS Pulse width 400s duty cycle 2%. R is measured at T of approximately 90C. J Half sine wave with duty cycle = 0.25, ton=1sec. 2 2017-04-27