IRFI4229PbF Features HEXFET Power MOSFET Advanced Process Technology Key Parameters Key Parameters Optimized for PDP Sustain, Vmax 250 V Energy Recovery and Pass Switch Applications DS Low E Rating to Reduce Power PULSE V typ. 300 V DS (Avalanche) Dissipation in PDP Sustain, Energy Recovery R typ. 10V 38 m DS(ON) and Pass Switch Applications Low Q for Fast Response G I max T = 100C 32 A RP C High Repetitive Peak Current Capability for T max 150 C J Reliable Operation Short Fall & Rise Times for Fast Switching 150C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability S D G TO-220 Full-Pak G D S Gate Drain Source Description This HEXFET Power MOSFET is specifically designed for Sustain Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E rating. Additional features of this MOSFET are 150C operating junction temperature and high PULSE repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFI4229PbF TO-220 Full-Pak Tube 50 IRFI4229PbF Absolute Maximum Ratings Symbol Parameter Max. Units V Gate-to-Source Voltage 30 GS V I T = 25C Continuous Drain Current, V 10V 19 D C GS I T = 100C Continuous Drain Current, V 10V 12 D C GS A I Pulsed Drain Current 72 DM I T = 100C Repetitive Peak Current 32 RP C P T = 25C Maximum Power Dissipation 46 W D C T = 100C Maximum Power Dissipation 18 P D C Linear Derating Factor 0.37 W/C T Operating Junction and J -40 to + 150 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 2.73 R JC C/W Junction-to-Ambient 65 R JA 1 2017-04-27 IRFI4229PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 250 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 340 mV/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 38 46 m V = 10V, I = 11A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V GS(th) V = V , I = 250A DS GS D Gate Threshold Voltage Temp. Coefficient -12 mV/C V T GS(th)/ J 20 V = 250V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 200 V = 250V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Trans conductance 26 S V = 25V, I = 11A DS D Q Total Gate Charge 73 110 I = 11A,V = 125V g D DS nC Q Gate-to-Drain Charge 24 V = 10V GS gd t Turn-On Delay Time 18 V = 125V, V = 10V d(on) DD GS t Rise Time 17 I = 11A r D ns t Turn-Off Delay Time 32 R = 2.4 d(off) G t Fall Time 13 See Fig. 22 f t Shoot Through Blocking Time 100 ns V = 200V,V = 15V,R = 5.1 st DD GS G L = 220nH, C = 0.3F, V = 15V GS 770 V = 200V, R = 5.1 T = 25C DD G J E Energy per Pulse J PULSE L = 220nH, C = 0.3F, V = 15V GS 1380 V = 200V, R = 5.1 T = 100C DD G J C Input Capacitance 4480 V = 0V iss GS C Output Capacitance 400 V = 25V oss DS pF C Reverse Transfer Capacitance 100 = 1.0MHz rss C eff. Effective Output Capacitance 270 V = 0V, V = 0V to 200V oss GS DS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact Avalanche Characteristics Typ. Max. Units Parameter E Single Pulse Avalanche Energy 110 AS mJ E 4.6 Repetitive Avalanche Energy AR V Repetitive Avalanche Voltage 300 V DS(Avalanche) I 11 Avalanche Current A AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I T = 25C 18 S C (Body Diode) showing the A Pulsed Source Current integral reverse I 72 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 11A,V = 0V SD J S GS t Reverse Recovery Time 120 180 ns T = 25C ,I = 11A, V = 50V rr J F DD Q Reverse Recovery Charge 540 810 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. starting T = 25C, L = 1.9mH, R = 25 , I = 11A. J G AS Pulse width 400s duty cycle 2%. R is measured at T of approximately 90C. J Half sine wave with duty cycle = 0.25, ton=1sec. 2 2017-04-27