IRFI4410ZPbF HEXFET Power MOSFET Applications V 100V DSS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply R typ. 7.9m DS(on) High Speed Power Switching Hard Switched and High Frequency Circuits R max. 9.3m DS(on) 43A I D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA S D Enhanced body diode dV/dt and dI/dt Capability G Lead-Free TO-220 Full-Pak G D S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFI4410ZPbF TO-220 Full-Pak Tube 50 IRFI4410ZPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 43 D C GS I T = 100C Continuous Drain Current, V 10V 30 A D C GS I Pulsed Drain Current 170 DM P T = 25C Maximum Power Dissipation 47 W D C Linear Derating Factor W/C 0.3 V Gate-to-Source Voltage V 30 GS E Single Pulse Avalanche Energy (Thermally Limited) 310 mJ AS T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 3.2 R JC C/W Junction-to-Ambient (PCB Mount) 65 R JA 1 2017-04-27 IRFI4410ZPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 95 mV/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 7.9 9.3 m V = 10V, I = 26A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D 20 V = 100 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 100V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.9 G Dynamic T = 25C (unless otherwise specified) J gfs Forward Trans conductance 80 S V = 50V, I = 26A DS D Q Total Gate Charge 81 110 I = 26A g D Q Gate-to-Source Charge 18 nC V = 50V gs DS V = 10V Q Gate-to-Drain Charge 23 gd GS t Turn-On Delay Time 15 V = 65V d(on) DD t Rise Time 27 I = 26A r D ns t Turn-Off Delay Time 43 R = 2.7 d(off) G t Fall Time 30 V = 10V f GS C Input Capacitance 4910 V = 0V iss GS C Output Capacitance 330 V = 50V oss DS C Reverse Transfer Capacitance 150 = 1.0MHz rss pF C Effective Output Capacitance (Energy Related) 420 V =0V,V = 0V to 80V See Fig. 11 oss eff. (ER) GS DS C Effective Output Capacitance (Time Related) 680 V = 0V, V = 0V to 80V oss eff. (TR) GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 43 S (Body Diode) showing the A integral reverse Pulsed Source Current I 170 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 26A,V = 0V SD J S GS 47 71 T = 25C J t Reverse Recovery Time ns rr 54 81 T = 125C J V = 85V R 110 160 T = 25C J I = 26A Q Reverse Recovery Charge nC F rr 140 210 T = 125C J di/dt= 100A/s I Reverse Recovery Current 2.5 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T , starting T = 25C, L = 0.91mH, R = 25 , I = 26A, V =10V. Part not recommended for use above this value. Jmax J G AS GS Pulse width 400s duty cycle 2%. R is measured at T approximately 90C. J C (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss eff. oss DS DSS C (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss eff. oss DS DSS 2 2017-04-27