X-On Electronics has gained recognition as a prominent supplier of IRFI530NPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFI530NPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFI530NPBF Infineon

IRFI530NPBF electronic component of Infineon
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See Product Specifications
Part No.IRFI530NPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Datasheet: IRFI530NPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.749 ea
Line Total: USD 1.75 
Availability - 645
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
645
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.749
10 : USD 0.8712
100 : USD 0.8074
500 : USD 0.6754
1000 : USD 0.6402
2000 : USD 0.6281
4000 : USD 0.6149

97
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.764
10 : USD 1.176
20 : USD 0.882
54 : USD 0.826

165
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 47
Multiples : 1
47 : USD 0.837
50 : USD 0.8087
100 : USD 0.7458

15830
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 537
Multiples : 1
537 : USD 0.8796
1000 : USD 0.8306

1940
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.7856

17460
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 537
Multiples : 1
537 : USD 0.8796
1000 : USD 0.8306

3771
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 12
Multiples : 1
12 : USD 1.2216
100 : USD 1.0406
500 : USD 0.88
1000 : USD 0.6846

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the IRFI530NPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFI530NPBF and other electronic components in the MOSFETs category and beyond.

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IRFI530NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS V 100V DSS Sink to Lead Creepage Dist. = 4.8mm R 0.11 DS(on) Fully Avalanche Rated Lead-Free I 12A D Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the S fast switching speed and ruggedized device design that HEXFET D G Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety TO-220 Full-Pak of applications. G D S The TO-220 Full Pak eliminates the need for additional insulating Gate Drain Source hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heat sink using a single clip or by a single screw fixing. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFI530NPbF TO-220 Full-Pak Tube 50 IRFI530NPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 12 D C GS I T = 100C Continuous Drain Current, V 10V 8.6 A D C GS I Pulsed Drain Current 60 DM P T = 25C Maximum Power Dissipation 41 W D C Linear Derating Factor W/C 0.27 V Gate-to-Source Voltage V 20 GS E Single Pulse Avalanche Energy (Thermally Limited) 150 mJ AS I Avalanche Current 9.0 A AR E Repetitive Avalanche Energy 4.1 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 3.7 R JC C/W Junction-to-Ambient 65 R JA 1 2017-04-27 IRFI530NPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.11 V = 10V, I = 6.6A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 6.4 S V = 50V, I = 9.0A DS D 25 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 44 I = 9.0A g D Q Gate-to-Source Charge 6.2 nC V = 80V gs DS Q Gate-to-Drain Charge 21 V = 10V , See Fig. 6 and 13 gd GS t Turn-On Delay Time 6.4 V = 50V d(on) DD t Rise Time 27 I = 9.0A r D ns t Turn-Off Delay Time 37 R = 12 d(off) G t Fall Time 25 R = 5.5 See Fig. 10 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 640 V = 0V iss GS C Output Capacitance 160 V = 25V oss DS pF C Reverse Transfer Capacitance 88 = 1.0MHz, See Fig. 5 rss C Drain to Sink Capacitance 12 = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 12 S (Body Diode) showing the A Pulsed Source Current integral reverse I 60 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 6.6A,V = 0V SD J S GS t Reverse Recovery Time 130 190 ns T = 25C ,I = 9.0A rr J F di/dt = 100A/s Q Reverse Recovery Charge 650 970 nC rr Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) starting T = 25C, L = 3.1mH, R = 25 , I = 9.0A (See fig. 12) J G AS I 9.0A, di/dt 520A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. t=60s, =60Hz Uses IRF530N data and test conditions. 2 2017-04-27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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