IRFI7536GPbF HEXFET Power MOSFET Applications V 60V DSS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply R typ. 2.7m DS(on) High Speed Power Switching Hard Switched and High Frequency Circuits R max. 3.4m DS(on) 86A I D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA S D Enhanced body diode dV/dt and dI/dt Capability G Lead-Free TO-220 Full-Pak G D S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFI7536GPbF TO-220 Full-Pak Tube 50 IRFI7536GPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 86 D C GS I T = 100C Continuous Drain Current, V 10V 73 A D C GS I Pulsed Drain Current 820 DM P T = 25C Maximum Power Dissipation 75 W D C Linear Derating Factor W/C 0.5 V Gate-to-Source Voltage V 20 GS T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Avalanche Characteristics E Single Pulse Avalanche Energy (Thermally Limited) 738 AS mJ I Avalanche Current A AR See Fig. 14, 15, 22a, 22b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 2.87 R JC C/W Junction-to-Ambient (PCB Mount) 65 R JA 1 2017-04-27 IRFI7536PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 29 mV/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 2.7 3.4 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D gfs Forward Trans conductance 88 S V = 25V, I = 75A DS D R Internal Gate Resistance 0.79 G 20 V = 60 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS = -20V Gate-to-Source Reverse Leakage -100 V GS Dynamic T = 25C (unless otherwise specified) J Q Total Gate Charge 130 195 I = 75A g D Q Gate-to-Source Charge 31 V = 30V gs DS nC Q Gate-to-Drain Charge 42 V = 10V GS gd Q Total Gate Charge Sync. (Qg - Qgd) 88 sync t Turn-On Delay Time 22 V = 39V d(on) DD t Rise Time 77 I = 75A r D ns t Turn-Off Delay Time 55 R = 2.7 d(off) G t Fall Time 64 V = 10V f GS C Input Capacitance 6600 V = 0V iss GS C Output Capacitance 720 V = 48V oss DS C Reverse Transfer Capacitance 400 = 1.0MHz, See Fig. 5 rss pF C Effective Output Capacitance (Energy Related) 1080 V =0V,V = 0V to 48V See Fig.11 oss eff. (ER) GS DS C Effective Output Capacitance (Time Related) 1400 V = 0V, V = 0V to 48V oss eff. (TR) GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 86 S (Body Diode) showing the A integral reverse Pulsed Source Current I 820 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 75A,V = 0V SD J S GS dv/dt Peak Diode Recovery dv/dt 3.3 V/ns T = 25C, I = 75A, V = 60V J S DS 43 T = 25C J V = 51V R t Reverse Recovery Time ns rr 53 T = 125C J I =75A F 58 T = 25C J Q Reverse Recovery Charge nC rr 65 T = 125C di/dt= 100A/s J I Reverse Recovery Current 2.4 A T = 25C RRM J Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T , starting T = 25C, L = 0.26mH, R = 50 , I = 75A, V =10V. Part not recommended for use above this value. Jmax J G AS GS I 75A, di/dt 890A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss eff. oss DS DSS C (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss eff. oss DS DSS R is measured at T approximately 90C. J R value shown is at time zero. JC 2 2017-04-27