IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications HEXFET Power MOSFET High frequency DC-DC converters Lead-Free V R max I DSS DS(on) D Benefits 150V 0.045 41A Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage 2 TO-220AB D Pak TO-262 TO-220 FullPak and Current IRFB41N15D IRFS41N15D IRFSL41N15D IRFIB41N15D Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 41 D C GS I T = 100C 10V 29 A D C Continuous Drain Current, V GS I 164 Pulsed Drain Current DM 2 P T = 25C 3.1 W D A Power Dissipation, D Pak P T = 25C 200 Power Dissipation, TO-220 D C P T = 25C 48 Power Dissipation, Fullpak D C Linear Derating Factor, TO-220 1.3 W/C Linear Derating Factor, Fullpak 0.32 V Gate-to-Source Voltage 30 V GS Peak Diode Recovery dv/dt dv/dt 2.7 V/ns T -55 to + 175 J Operating Junction and T C STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 1.1(10) N m (lbf in) Thermal Resistance Parameter Typ. Max. Units R 0.75 C/W JC Junction-to-Case R 3.14 JC Junction-to-Case, Fullpak R 0.50 cs Case-to-Sink, Flat, Greased Surface R 62 JA Junction-to-Ambient, TO-220 2 R JA 40 Junction-to-Ambient, D Pak R JA Junction-to-Ambient, Fullpak 65 Notes through are on page 12 www.irf.com 1 08/10/06IRFB/IRFIB/IRFS/IRFSL41N15DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V V = 0V, I = 250A (BR)DSS Drain-to-Source Breakdown Voltage 150 V GS D V / T Reference to 25C, I = 1mA (BR)DSS J Breakdown Voltage Temp. Coefficient 0.17 V/C D R V = 10V, I = 25A Static Drain-to-Source On-Resistance 0.045 DS(on) GS D V V = V , I = 250A Gate Threshold Voltage 3.0 5.5 V GS(th) DS GS D I V = 150V, V = 0V Drain-to-Source Leakage Current 25 A DSS DS GS V = 120V, V = 0V, T = 150C 250 DS GS J I V = 30V GSS Gate-to-Source Forward Leakage 100 nA GS V = -30V Gate-to-Source Reverse Leakage -100 GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 50V, I = 25A gfs Forward Transconductance 18 S DS D Q I = 25A g Total Gate Charge 72 110 D Q V = 120V gs Gate-to-Source Charge 21 31 nC DS Q V = 10V gd Gate-to-Drain Mille) Charge 35 52 GS t V = 75V Turn-On Delay Time 16 d(on) DD t I = 25A r Rise Time 63 D t R = 2.5 d(off) Turn-Off Delay Time 25 ns G t V = 10V f Fall Time 14 GS C V = 0V iss Input Capacitance 2520 GS C V = 25V oss Output Capacitance 510 DS C Reverse Transfer Capacitance 110 pF = 1.0MHz rss C V = 0V, V = 1.0V, = 1.0MHz Output Capacitance 3090 oss GS DS C V = 0V, V = 120V, = 1.0MHz oss Output Capacitance 230 GS DS C eff. V = 0V, V = 0V to 120V oss Effective Output Capacitance 250 GS DS Avalanche Characteristics Parameter Typ. Max. Units E 470 mJ AS Single Pulse Avalanche Energy I 25 A AR Avalanche Current E 20 mJ AR Repetitive Avalanche Energy Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 41 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 164 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 25A, V = 0V SD J S GS t Reverse Recovery Time 170 260 ns T = 25C, I = 25A rr J F Q Reverse Recovery Charge 1.3 1.9 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com