PD - 94808 IRFIZ24NPbF HEXFET Power MOSFET Advanced Process Technology D Isolated Package V = 55V DSS High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm R = 0.07 Fully Avalanche Rated DS(on) G Lead-Free Description I = 14A D S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation TO-220 FULLPAK is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 14 D C GS I T = 100C Continuous Drain Current, V 10V 10 A D C GS I Pulsed Drain Current 68 DM P T = 25C Power Dissipation 29 W D C Linear Derating Factor 0.19 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 71 mJ AS I Avalanche Current 10 A AR E Repetitive Avalanche Energy 2.9 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 5.2 JC C/W R Junction-to-Ambient 65 JA 11/3/03IRFIZ24NPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.07 V = 10V, I = 7.8A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 4.5 S V = 25V, I = 10A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 20 I = 10A g D Q Gate-to-Source Charge 5.3 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 7.6 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 4.9 V = 28V d(on) DD t Rise Time 34 I = 10A r D ns t Turn-Off Delay Time 19 R = 24 d(off) G t Fall Time 27 R = 2.6, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 370 V = 0V iss GS C Output Capacitance 140 V = 25V oss DS pF C Reverse Transfer Capacitance 65 = 1.0MHz, See Fig. 5 rss C Drain to Sink Capacitance 12 = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 14 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 68 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 7.8A, V = 0V SD J S GS t Reverse Recovery Time 56 83 ns T = 25C, I = 10A rr J F Q Reverse RecoveryCharge 120 180 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) V = 25V, starting T = 25C, L = 1.0mH t=60s, =60Hz DD J R = 25, I = 10A. (See Figure 12) G AS Uses IRFZ24N data and test conditions I 10A, di/dt 280A/s, V V , SD DD (BR)DSS T 175C J