IRFL4315PbF HEXFET Power MOSFET V R max I Applications DSS DS(on) D High frequency DC-DC converters 150V 185m V = 10V 2.6A GS Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) SOT-223 Fully Characterized Avalanche Voltage and Current Lead-Free Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 2.6 D A GS I T = 70C Continuous Drain Current, V 10V 2.1 A D A GS I Pulsed Drain Current 21 DM P T = 25C Power Dissipation 2.8 W D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 6.3 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Ambient (PCB Mount, steady state) 45 C/W JA Notes through are on page 8 www.irf.com 1 09/22/10IRFL4315PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.19 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 185 m V = 10V, I = 1.6A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D 25 V = 150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 120V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 3.5 S V = 50V, I = 1.6A fs DS D Q Total Gate Charge 12 19 I = 1.6A g D Q Gate-to-Source Charge 2.1 3.1 nC V = 120V gs DS Q Gate-to-Drain Mille) Charge 6.8 10 V = 10V gd GS t Turn-On Delay Time 8.4 V = 75V d(on) DD t Rise Time 21 I = 1.6A r D ns t Turn-Off Delay Time 20 R = 15 d(off) G t Fall Time 19 V = 10V f GS C Input Capacitance 420 V = 0V iss GS C Output Capacitance 100 V = 25V oss DS C Reverse Transfer Capacitance 25 pF = 1.0MHz rss C Output Capacitance 720 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 48 V = 0V, V = 120V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 98 V = 0V, V = 0V to 120V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 38 mJ AS I Avalanche Current 3.1 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.6 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 21 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.5 V T = 25C, I = 2.1A, V = 0V SD J S GS t Reverse Recovery Time 61 91 ns T = 25C, I = 1.6A rr J F Q Reverse RecoveryCharge 160 240 nC di/dt = 100A/s rr 2 www.irf.com