PD - 91388C
IRFM260
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (TO-254AA)
HEXFET MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on) ID
IRFM260 0.060 35A*
HEXFET MOSFET technology is the key to International
Rectifiers advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-
state resistance combined with high transconductance. TO-254AA
HEXFET transistors also feature all of the well-
established advantages of MOSFETs, such as voltage
Features:
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are well-
Simple Drive Requirements
suited for applications such as switching power supplies,
Ease of Paralleling
motor controls, inverters, choppers, audio amplifiers,
Hermetically Sealed
high energy pulse circuits, and virtually any application
Electrically Isolated
where high reliability is required. The HEXFET
Dynamic dv/dt Rating
transistors totally isolated package eliminates the need
Light-weight
for additional isolating material between the device and
the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
I @ V = 10V, T = 25C Continuous Drain Current 35*
D GS C
A
I @ V = 10V, T = 100C Continuous Drain Current 28
D GS C
I Pulsed Drain Current 140
DM
P @ T = 25C Max. Power Dissipation 250 W
D C
Linear Derating Factor 2.0 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 700 mJ
AS
I Avalanche Current 35 A
AR
E Repetitive Avalanche Energy 25 mJ
AR
dv/dt Peak Diode Recovery dv/dt 4.3 V/ns
T Operating Junction -55 to 150
J
o
T Storage Temperature Range C
STG
Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (Typical) g
* Current is limited by Package
For footnotes refer to the last page
www.irf.com 1
IRFM260
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 1.0mA
DSS GS D
BV /T Temperature Coefficient of Breakdown 0.24 V/C Reference to 25C, I = 1.0mA
DSS J D
Voltage
R Static Drain-to-Source On-State 0.060 V = 10V, I = 28A
DS(on) GS D
Resistance 0.068 V = 10V, I = 35A
GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 22 S ( )V > 15V, I = 28A
fs DS DS
I Zero Gate Voltage Drain Current 25 V = 160V ,V =0V
DSS DS GS
A
250 V = 160V,
DS
V = 0V, T = 125C
GS J
I Gate-to-Source Leakage Forward 100 V = 20V
GSS GS
nA
I Gate-to-Source Leakage Reverse -100 V = -20V
GSS GS
Q Total Gate Charge 230 V =10V, I = 35A
g GS D
Q Gate-to-Source Charge 40 nC V = 100V
gs DS
Q Gate-to-Drain (Miller) Charge 110
gd
t Turn-On Delay Time 29 V = 100V, I = 35A,
d(on) DD D
t Rise Time 120 V =10V, R = 2.35
r GS G
ns
t Turn-Off Delay Time 110
d(off)
t Fall Time 92
f
Measured from drain lead (6mm/
L + L Total Inductance 6.8
S D
nH
0.25in. from package) to source lead
(6mm/0.25in. from package)
C Input Capacitance 5100 V = 0V, V = 25V
iss GS DS
C Output Capacitance 1100 pF f = 1.0MHz
oss
C Reverse Transfer Capacitance 280
rss
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I Continuous Source Current (Body Diode) 35*
S
A
I Pulse Source Current (Body Diode) 140
SM
V Diode Forward Voltage 1.8 V T = 25C, I = 35A, V = 0V
j
SD S GS
t Reverse Recovery Time 420 ns T = 25C, I = 35A, di/dt 100A/s
j
rr F
Q Reverse Recovery Charge 4.9 C V 50V
RR DD
t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on S D
* Current is limited by Package
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R Junction-to-Case 0.50
thJC
R Case-to-Sink 0.21 C/W
thJCS
R Junction-to-Ambient 48 Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2 www.irf.com