PD-90712C IRFM360 POWER MOSFET 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) ID IRFM360 0.20 23A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. TO-254AA The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, Features: ease of paralleling and electrical parameter temperature Simple Drive Requirements stability. They are well-suited for applications such as Ease of Paralleling switching power supplies, motor controls, inverters, Hermetically Sealed choppers, audio amplifiers, high energy pulse circuits, and Electrically Isolated virtually any application where high reliability is required. Dynamic dv/dt Rating The HEXFET transistors totally isolated package eliminates Light-weight the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 23 D GS C A I V = 10V, T = 100C Continuous Drain Current 14 D GS C I Pulsed Drain Current 92 DM P T = 25C Max. Power Dissipation 250 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 980 mJ AS I Avalanche Current 23 A AR E Repetitive Avalanche Energy 25 mJ AR dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T Operating Junction -55 to 150 J T Storage Temperature Range C STG Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s) Weight 9.3 (Typical) g For footnotes refer to the last page www.irf.com 1 IRFM360 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 400 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 0.46 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.20 V = 10V, I = 14A DS(on) GS D Resistance 0.23 V = 10V, I = 23A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 1.4 V = 15V, I = 14A fs DS DS I Zero Gate Voltage Drain Current 25 V = 320V ,V =0V DSS DS GS A 250 V = 320V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 210 V =10V, I = 23A g GS D Q Gate-to-Source Charge 28 nC V = 200V gs DS Q Gate-to-Drain (Miller) Charge 120 gd t Turn-On Delay Time 33 V = 200V, I = 23A, d(on) DD D t Rise Time 140 V =10V, R = 2.35 r GS G ns t Turn-Off Delay Time 120 d(off) t Fall Time 99 f L + L Total Inductance 6.8 Measured from drain lead (6mm/ S D nH 0.25in. from package) to source lead (6mm/0.25in. from package) C Input Capacitance 4200 V = 0V, V = 25V iss GS DS C Output Capacitance 900 pF f = 1.0MHz oss C Reverse Transfer Capacitance 400 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 23 S A I Pulse Source Current (Body Diode) 92 SM V Diode Forward Voltage 1.8 V T = 25C, I = 23A, V = 0V j S GS SD t Reverse Recovery Time 1000 nS T = 25C, I = 23A, di/dt 100A/s rr j F Q Reverse Recovery Charge 16 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 0.5 thJC R Csae-to-sink 0.21 C/W thCS R Junction-to-Ambient 48 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com