PD - 90493F IRFM450 JANTX2N7228 JANTXV2N7228 POWER MOSFET REF: MIL-PRF-19500/592 THRU-HOLE (TO-254AA) 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM450 0.415 12A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistors totally isolated package eliminates the Dynamic dv/dt Rating need for additional isolating material between the device Light-weight and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 12 D GS C A I V = 10V, T = 100C Continuous Drain Current 8.0 D GS C I Pulsed Drain Current 48 DM P T = 25C Max. Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 750 mJ AS I Avalanche Current 12 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 3.5 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s) Weight 9.3 (Typical) g For footnotes refer to the last page www.irf.com 1 02/05/02IRFM450 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 500 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 0.68 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.415 V = 10V, I = 8.0A DS(on) GS D Resistance 0.515 V = 10V, I = 12A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 6.5 S ( )V > 15V, I = 8.0A fs DS DS I Zero Gate Voltage Drain Current 25 V = 400V ,V =0V DSS DS GS A 250 V = 400V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 120 V =10V, I = 12A g GS D Q Gate-to-Source Charge 19 nC V = 250V gs DS Q Gate-to-Drain (Miller) Charge 70 gd t Turn-On Delay Time 35 V = 250V, I = 12A, d(on) DD D t Rise Time 190 V =10V, R = 2.35 r GS G ns t Turn-Off Delay Time 170 d(off) t Fall Time 130 f Measured from drain lead (6mm/0.25in. from L + L Total Inductance 6.8 S D nH package) to source lead (6mm/0.25in. from package) C Input Capacitance 2700 V = 0V, V = 25V iss GS DS C Output Capacitance 600 pF f = 1.0MHz oss C Reverse Transfer Capacitance 240 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 12 S A I Pulse Source Current (Body Diode) 48 SM V Diode Forward Voltage 1.7 V T = 25C, I = 12A, V = 0V j S GS SD t Reverse Recovery Time 1600 nS T = 25C, I = 12A, di/dt 100A/ s rr j F Q Reverse Recovery Charge 14 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 0.83 thJC R Case-to-Sink 0.21 C/W thJCS R Junction-to-Ambient 48 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com