PD - 91553F IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U POWER MOSFET REF:MIL-PRF-19500/595 SURFACE MOUNT(SMD-1) 100V, P-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN9140 0.20 -18A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resis- tance combined with high transconductance. HEXFET tran- SMD-1 sistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, Features: ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistors totally isolated package eliminates the Surface Mount need for additional isolating material between the device Dynamic dv/dt Rating and the heatsink. This improves thermal efficiency and Light-weight reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = -10V, T = 25C Continuous Drain Current -18 D GS C A I V = -10V, T = 100C Continuous Drain Current -11 D GS C I Pulsed Drain Current -72 DM P T = 25C Max. Power Dissipation 125 W D C Linear Derating Factor 1.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 500 mJ AS I Avalanche Current -18 A AR E Repetitive Avalanche Energy 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Package Mounting Surface Temperature 300 (for 5 S) Weight 2.6(typical) g For footnotes refer to the last page www.irf.com 1 09/22/03IRFN9140 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown -0.087 V/C Reference to 25C, I = -1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.20 V = -10V, I = -11A DS(on) GS D Resistance 0.22 V = -10V, I = -18A GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 6.2 S ( ) V > -15V, I = -11A fs DS DS I Zero Gate Voltage Drain Current -25 V = -80V, V = 0V DSS DS GS A -250 V = -80V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward -100 V = -20V GSS GS nA I Gate-to-Source Leakage Reverse 100 V = 20V GSS GS Q Total Gate Charge 60 V = -10V, ID -18A g GS = Q Gate-to-Source Charge 13 nC V = -50V gs DS Q Gate-to-Drain (Miller) Charge 35.2 gd t Turn-On Delay Time 35 V = -50V, I = -18A d(on) DD D t Rise Time 85 R = 9.1, V = -10V r G GS ns t Turn-Off Delay Time 85 d(off) t Fall Time 65 f L L Total Inductance 4.0 nH S + D Measured from the center of drain pad to center of source pad C Input Capacitance 1400 V = 0V, V = -25V iss GS DS C Output Capacitance 600 pF f = 1.0MHz oss C Reverse Transfer Capacitance 200 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) -18 S A I Pulse Source Current (Body Diode) -72 SM V Diode Forward Voltage -5.0 V T = 25C, I = -18A, V = 0V j SD S GS t Reverse Recovery Time 280 nS Tj = 25C, I = -18A, di/dt -100A/s rr F Q Reverse Recovery Charge 3.6 c V -30V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction to Case 1.0 thJC C/W R Junction to PC Board 4.0 Soldered to a copper-clad PC board thJ-PCB Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com