PD - 91556A IRFNG50 POWER MOSFET 1000V, N-CHANNEL SURFACE MOUNT (SMD-1) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFNG50 2.0 5.5A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- SMD-1 sistance combined with high transconductance. HEXFET transistors also feature all of the well-established advan- Features: tages of MOSFETs, such as voltage control, very fast switch- ing, ease of paralleling and electrical parameter temperature Simple Drive Requirements stability. They are well-suited for applications such as switch- Ease of Paralleling ing power supplies, motor controls, inverters, choppers, Hermetically Sealed audio amplifiers, high energy pulse circuits, and virtually Electrically Isolated any application where high reliability is required. The HEXFET transistors totally isolated package eliminates the Dynamic dv/dt Rating Surface mount need for additional isolating material between the device and the heatsink. This improves thermal efficiency and Light-weight reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 5.5 D GS C A I V = 10V, T = 100C Continuous Drain Current 3.5 D GS C I Pulsed Drain Current 22 DM P T = 25C Max. Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 860 mJ AS I Avalanche Current 5.5 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 1.0 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Package Mounting Surface Temperature 300(for 5 seconds) Weight 2.6 (Typical) g For footnotes refer to the last page www.irf.com 1 2/11/02IRFNG50 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 1000 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 1.4 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 2.0 V = 10V, I = 3.5A DS(on) GS D Resistance 2.25 V = 10V, I = 5.5A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 5.2 S ( )V > 15V, I = 3.5A fs DS DS I Zero Gate Voltage Drain Current 25 V = 800V ,V =0V DSS DS GS A 250 V = 800V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 200 V =10V, I =5.5A g GS D Q Gate-to-Source Charge 20 nC V = 400V gs DS Q Gate-to-Drain (Miller) Charge 110 gd t Turn-On Delay Time 30 V = 400V, I = 5.5A, d(on) DD D t Rise Time 44 V =10V, R = 2.35 r GS G ns t Turn-Off Delay Time 210 d(off) t Fall Time 60 f L + L Total Inductance 4.0 S D Measured from the center of drain nH pad to center of source pad. C Input Capacitance 2400 V = 0V, V = 25V iss GS DS C Output Capacitance 240 pF f = 1.0MHz oss C Reverse Transfer Capacitance 80 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 5.5 S A I Pulse Source Current (Body Diode) 22 SM V Diode Forward Voltage 1.8 V T = 25C, I = 5.5A, V = 0V j SD S GS t Reverse Recovery Time 1200 nS T = 25C, I = 5.5A, di/dt 100A/ s j rr F Q Reverse Recovery Charge 8.4 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 0.83 C/W thJC For footnotes refer to the last page 2 www.irf.com