PD - 95509A IRFP1405PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V = 55V DSS 175C Operating Temperature Fast Switching R = 5.3m DS(on) Repetitive Avalanche Allowed up to Tjmax G Lead-Free I = 95A D Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-247AC Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) GS 160 D C I T = 100C Continuous Drain Current, V 10V GS 110 A D C I T = 25C Continuous Drain Current, V 10V (Package Limited) GS 95 D C Pulsed Drain Current I 640 DM P T = 25C Power Dissipation 310 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E AS (Thermally limited) 530 mJ Single Pulse Avalanche Energy Tested Value E (Tested ) 1060 AS Avalanche Current I See Fig.12a, 12b, 15, 16 A AR Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature RangeC STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case * 0.49 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W cs R JA Junction-to-Ambient * 40 HEXFET is a registered trademark of International Rectifier. * www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.058 V/C Reference to 25C, I = 1mA D R m Static Drain-to-Source On-Resistance 4.2 5.3 V = 10V, I = 95A DS(on) GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 77 S V = 25V, I = 95A DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 120 180 I = 95A D Q Gate-to-Source Charge 30 nC V = 44V gs DS Q gd Gate-to-Drain Mille) Charge 53 V = 10V GS t Turn-On Delay Time 12 V = 28V d(on) DD t r Rise Time 160 I = 95A D t Turn-Off Delay Time 140 ns R = 2.6 d(off) G t f Fall Time 150 V = 10V GS L D Internal Drain Inductance 5.0 Between lead, D nH 6mm (0.25in.) G L S Internal Source Inductance 13 from package S and center of die contact C iss Input Capacitance 5600 V = 0V GS C Output Capacitance 1310 V = 25V oss DS C rss Reverse Transfer Capacitance 350 pF = 1.0MHz C Output Capacitance 6550 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 920 V = 0V, V = 44V, = 1.0MHz GS DS C eff. Effective Output Capacitance 1750 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 95 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 640 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 95A, V = 0V SD J S GS t Reverse Recovery Time 70 110 ns T = 25C, I = 95A, V = 28V rr DD J F Q Reverse Recovery Charge 170 260 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.12mH Jmax J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax R = 25 , I = 95A, V =10V. Part not GS G AS avalanche performance. recommended for use above this value. This value determined from sample failure population. 100% Pulse width 1.0ms duty cycle 2%. tested to this value in production. 2 www.irf.com