PD - 95010A IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating V = 200V DSS 175C Operating Temperature Fast Switching R = 0.04 DS(on) Fully Avalanche Rated G Ease of Paralleling I = 50A D Simple Drive Requirements S Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial TO-247AC applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 50 D C GS I T = 100C Continuous Drain Current, V 10V 35 A D C GS I Pulsed Drain Current 200 DM P T = 25C Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 560 mJ AS I Avalanche Current 50 A AR E Repetitive Avalanche Energy 30 mJ AR dv/dt Peak Diode Recovery dv/dt 10 V/ns T Operating Junction and -55 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.50 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R Junction-to-Ambient 40 JA www.irf.com 1 IRFP260NPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.26 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.04 V = 10V, I = 28A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 27 S V = 50V, I = 28A fs DS D 25 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 234 I = 28A g D Q Gate-to-Source Charge 38 nC V = 160V gs DS Q Gate-to-Drain Mille) Charge 110 V = 10V gd GS t Turn-On Delay Time 17 V = 100V d(on) DD t Rise Time 60 I = 28A r D ns t Turn-Off Delay Time 55 R = 1.8 d(off) G t Fall Time 48 V = 10V f GS D Between lead, L Internal Drain Inductance 5.0 D 6mm (0.25in.) nH G from package L Internal Source Inductance 13 S and center of die contact S C Input Capacitance 4057 V = 0V iss GS C Output Capacitance 603 pF V = 25V oss DS C Reverse Transfer Capacitance 161 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 50 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 200 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 28A, V = 0V SD J S GS t Reverse Recovery Time 268 402 ns T = 25C, I = 28A rr J F Q Reverse Recovery Charge 1.9 2.8 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by I 28A di/d 486A/s, V V , SD DD (BR)DSS max. junction temperature. T 175C J Pulse width 400s duty cycle 2%. Starting T = 25C, L = 1.5mH J R = 25 , I = 28A. G AS 2 www.irf.com