IRFP3006PbF V 60V DSS D R typ. 2.1m DS(on) max. 2.5m S G D 270A I D (Silicon Limited) G I 195A D (Package Limited) S TO-247AC Applications G D S High Efficiency Synchronous Rectification in SMPS Gate Drain Source Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity IRFP3006PbF TO-247 Tube 25 IRFP3006PbF Absolute Maximum Ratings Symbol Parameter Max. Units 270 A I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 190 I T = 100C Continuous Drain Current, V 10V(Silicon Limited) D C GS Continuous Drain Current, V 10V (Wire Bond Limited) 195 I T = 25C GS D C I Pulsed Drain Current 1080 DM P T = 25C Maximum Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C Gate-to-Source Voltage 20 V V GS Peak Diode Recovery 10 dv/dt V/ns Operating Junction and -55 to + 175 T J Storage Temperature Range T STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbfin (1.1Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 320 mJ AS (Thermally limited) I Avalanche Current See Fig. 14, 15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.4 R JC Case-to-Sink, Flat Greased Surface R 0.24 C/W CS R Junction-to-Ambient 40 JA 1 www.irf.com 2013 International Rectifier September 06, 2013 IRFP3006PbF Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 5mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 2.1 2.5 m V = 10V, I = 170A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.0 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 280 S V = 25V, I = 170A DS D Q Total Gate Charge 200 300 I = 170A g D Q Gate-to-Source Charge 37 V =30V DS gs nC Q Gate-to-Drain Mille) Charge 60 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 140 I = 170A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 16 V = 39V d(on) DD t Rise Time 182 I = 170A D r ns t Turn-Off Delay Time 118 R = 2.7 d(off) G V = 10V t Fall Time 189 f GS C Input Capacitance 8970 V = 0V iss GS V = 50V C Output Capacitance 1020 oss DS C Reverse Transfer Capacitance 534 = 1.0 MHz, See Fig. 5 rss pF C eff. (ER) Effective Output Capacitance 1480 V = 0V, V = 0V to 48V oss GS DS (Energy Related) See Fig. 11 C eff. (TR) Effective Output Capacitance 1920 V = 0V, V = 0V to 48V oss GS DS (Time Related) Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 257 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1028 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 170A, V = 0V SD J S GS t Reverse Recovery Time 44 ns T = 25C rr J 48 T = 125C J V = 51V, R Q Reverse Recovery Charge 63 nC T = 25C rr J I = 170A F 77 T = 125C J di/dt = 100A/s I Reverse Recovery Current 2.4 A T = 25C RRM J Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. Junction temperature. Limited by T , starting T = 25C, L = 0.022mH, R = 50, I = 170A,V =10V. Part not Recommended for use above Jmax J G AS GS this value. ISD 170A, di/dt 1360A/s, V V , T 175C. DD (BR)DSS J Pulse width 400s duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while V is rising from 0 to 80% V . DS DSS Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while V is rising from 0 to 80% V . DS DSS R is measured at T approximately 90C. J * All spec data and curves based on (TO-220 Pak -IRFB3006PbF) Datasheet. 2 www.irf.com 2013 International Rectifier September 06, 2013