IRFP3415PbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating V = 150V DSS 175C Operating Temperature Fast Switching R = 0.042 Fully Avalanche Rated DS(on) G Lead-Free I = 43A D S Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial- industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package TO-247AC because of its isolated mounting hole. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 43 D C GS I T = 100C Continuous Drain Current, V 10V 30 A D C GS I Pulsed Drain Current DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/ V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 590 mJ AS I Avalanche Current 22 A AR E Repetitive Avalanche Energy 20 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R Junction-to-Ambient 40 JA www.irf.com 1 IRFP3415PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.17 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.042 V = 10V, I = 22A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 19 S V = 50V, I = 22A fs DS D 25 V = 150V, V = 0V DS GS A 250 V = 120V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 200 I = 22A g D Q Gate-to-Source Charge 17 nC V = 120V gs DS Q Gate-to-Drain Mille) Charge 98 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 12 V = 75V d(on) DD t Rise Time 55 I = 22A r D t Turn-Off Delay Time 71 R = 2.5 d(off) G t Fall Time 69 R = 3.3, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) G from package and center of die contact S C Input Capacitance 2400 V = 0V iss GS C Output Capacitance 640 pF V = 25V oss DS C Reverse Transfer Capacitance 340 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current integral reverse SM 150 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 22A, V = 0V SD J S GS t Reverse Recovery Time 260 390 ns T = 25C, I = 22A rr J F Q Reverse RecoveryCharge 2.2 3.3 C di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by I 22A, di/dt 820A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 175C J V = 25V, starting T = 25C, L = 2.4mH Pulse width 300 s duty cycle 2%. DD J R = 25 I = 22A. (See Figure 12) G AS 2 www.irf.com