IRFP4127PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS D V 200V DSS Uninterruptible Power Supply High Speed Power Switching R 17m DS(on) typ. Hard Switched and High Frequency Circuits G 21m max S I 75A D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA S Enhanced body diode dV/dt and dI/dt Capability D Lead-Free, RoHS Compliant G TO-247AC G D S Gate Drain Source Standard Pack Orderable Part Number Base part number Package Type Form Quantity IRFP4127PbF TO-247AC Tube 25 IRFP4127PbF Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 75 D C GS I T = 100C Continuous Drain Current, V 10V 53 A D C GS I Pulsed Drain Current 300 DM P T = 25C Maximum Power Dissipation 341 W D C Linear Derating Factor 2.3 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 57 V/ns T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 244 mJ AS (Thermally limited) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.4 JC R Case-to-Sink, Flat Greased Surface C/W CS 0.24 Junction-to-Ambient R 40 JA 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 09, 2015 IRFP4127PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 5mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 17 21 m V = 10V, I = 44A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D 20 V = 200 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =200V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 3.0 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J gfs Forward Transconductance 45 S V = 50V, I =44A DS D Q Total Gate Charge 100 150 I = 44A g D Q Gate-to-Source Charge 30 V = 100V gs DS nC Q Gate-to-Drain Charge 31 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 69 I = 44A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 17 V = 100V d(on) DD t Rise Time 18 I = 44A r D ns t Turn-Off Delay Time 56 R = 2.7 d(off) G t Fall Time 22 V = 10V f GS C Input Capacitance 5380 V = 0V iss GS C Output Capacitance 410 V = 50V oss DS C Reverse Transfer Capacitance 86 = 1.0MHz rss pF V = 0V, VDS = 0V to 160V GS C Effective Output Capacitance (Energy Related) 360 oss eff.(ER) See Fig.11 C Output Capacitance (Time Related) 590 V = 0V, VDS = 0V to 160V oss eff.(TR) GS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D Continuous Source Current MOSFET symbol I 75 S (Body Diode) showing the A G Pulsed Source Current integral reverse I 300 SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 44A,V = 0V SD J S GS 136 T = 25C V = 100V J DD t Reverse Recovery Time ns rr 139 T = 125C I = 44A, J F 458 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 688 T = 125C J I Reverse Recovery Current 8.3 A T = 25C RRM J Notes: Repetitive rating pulse width limited by max. junction temperature. Recommended max EAS limit, starting T = 25C, L = 0.25mH, R = 25 , I = 44A, V =10V. J G AS GS I 4A, di/dt A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 Ris measured at T approximately 90C J 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 09, 2015