PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET Power MOSFET Features D Advanced Process Technology V = 100V DSS Ultra Low On-Resistance 175C Operating Temperature R = 190m DS(on) Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free I = 8.7A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make D-Pak I-Pak this design an extremely efficient and reliable device IRFR120ZPbF IRFU120ZPbF for use in a wide variety of applications. Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C GS 8.7 D C I T = 100C Continuous Drain Current, V 10V A GS 6.1 D C Pulsed Drain Current I 35 DM P T = 25C Power Dissipation 35 W D C Linear Derating Factor 0.23 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E AS (Thermally limited) 18 mJ Single Pulse Avalanche Energy Tested Value E (Tested ) AS 20 Avalanche Current I AR See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 4.28 JC Junction-to-Ambient (PCB mount) R 40 C/W JA RJunction-to-Ambient 110 JA HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.084 V/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 150 190 V = 10V, I = 5.2A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 16 S V = 25V, I = 5.2A DS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge6.910 I = 5.2A g D Q Gate-to-Source Charge 1.6 nC V = 80V gs DS Q gd Gate-to-Drain Mille) Charge 3.1 V = 10V GS t d(on) Turn-On Delay Time 8.3 V = 50V DD t Rise Time 26 I = 5.2A r D t Turn-Off Delay Time 27 ns R = 53 d(off) G t Fall Time 23 V = 10V f GS D L D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C Input Capacitance 310 V = 0V iss GS C oss Output Capacitance 41 V = 25V DS C rss Reverse Transfer Capacitance 24 pF = 1.0MHz C Output Capacitance 150 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 26 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 57 V = 0V, V = 0V to 80V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 8.7 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 35 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 5.2A, V = 0V SD J S GS t Reverse Recovery Time 2436ns T = 25C, I = 5.2A, V = 50V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 23 35 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com