PD - 96191B IRFR2307ZPbF IRFU2307ZPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175C Operating Temperature V = 75V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free R = 16m DS(on) G Description I = 42A D This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. D-Pak I-Pak IRFR2307ZPbF IRFU2307ZPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) 53 I T = 25C GS D C Continuous Drain Current, V 10V 38 A I T = 100C GS D C (Package Limited) I T = 25C Continuous Drain Current, V 10V 42 GS D C 210 I Pulsed Drain Current DM P T = 25C Power Dissipation 110 W D C 0.70 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS E Single Pulse Avalanche Energy 100 mJ AS (Thermally limited) E (Tested ) Single Pulse Avalanche Energy Tested Value 140 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR -55 to + 175 T Operating Junction and J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.42 JC R Junction-to-Ambient (PCB mount) 50 C/W JA RJunction-to-Ambient 110 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.072 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 12.8 16 m V = 10V, I = 32A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100A GS(th) DS GS D gfs Forward Transconductance 30 S V = 25V, I = 32A DS D I Drain-to-Source Leakage Current 25 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 50 75 I = 32A g D Q Gate-to-Source Charge 14 nC V = 60V gs DS Q Gate-to-Drain Mille) Charge 19 V = 10V gd GS t Turn-On Delay Time 16 V = 38V d(on) DD t Rise Time 65 I = 32A r D t Turn-Off Delay Time 44 ns R = 10 d(off) G t Fall Time 29 V = 10V f GS D L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C Input Capacitance 2190 V = 0V iss GS C Output Capacitance 280 V = 25V oss DS C Reverse Transfer Capacitance 150 pF = 1.0MHz rss C Output Capacitance 1070 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 190 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 400 V = 0V, V = 0V to 60V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 42 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 210 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 32A, V = 0V SD J S GS t Reverse Recovery Time 31 47 ns T = 25C, I = 32A, V = 38V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 31 47 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com