PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount (IRFR2405) HEXFET Power MOSFET Straight Lead (IRFU2405) Advanced Process Technology D V = 55V Dynamic dv/dt Rating DSS Fast Switching Fully Avalanche Rated R = 0.016 DS(on) G Lead-Free Description I = 56A D Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- D-Pak I-Pak hole mounting applications. Power dissipation levels IRFR2405 IRFU2405 up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 56 D C GS I T = 100C Continuous Drain Current, V 10V 40 A D C GS I Pulsed Drain Current 220 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 130 mJ AS I Avalanche Current 34 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Junction-to-Ambient (PCB mount)* 50 C/W JA R Junction-to-Ambient 110 JA When mounted on 1 square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note AN-994 www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.0118 0.016 V = 10V, I = 34A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 30 S V = 25V, I = 34A fs DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 70 110 I = 34A g D Q Gate-to-Source Charge 16 23 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 19 29 V = 10V gd GS t Turn-On Delay Time 15 V = 28V d(on) DD t Rise Time 130 I = 34A r D ns t Turn-Off Delay Time 55 R = 6.8 d(off) G t Fall Time 78 V = 10V f GS D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 2430 V = 0V iss GS C Output Capacitance 470 pF V = 25V oss DS C Reverse Transfer Capacitance 100 = 1.0MHz, See Fig. 5 rss C Output Capacitance 2040 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 350 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 350 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 56 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 220 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 34A, V = 0V SD J S GS t Reverse Recovery Time 62 93 ns T = 25C, I = 34A rr J F Q Reverse RecoveryCharge 170 260 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. C eff. is a fixed capacitance that gives the same charging time oss Starting T = 25C, L = 0.22mH J as C while V is rising from 0 to 80% V oss DS DSS R = 25, I = 34A. G AS Calculated continuous current based on maximum allowable I 34A, di/dt 190A/s, V V , SD DD (BR)DSS junction temperature. Package limitation current is 30A T 175C J 2 www.irf.com