IRFR3410PbF IRFU3410PbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D High frequency DC-DC converters 100V 39m 31A Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3410 IRFU3410 Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 100 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 31 D C GS I T = 100C Continuous Drain Current, V 10V 22 A D C GS I Pulsed Drain Current 125 DM P T = 25C Maximum Power Dissipation 110 W D C P T = 25C Maximum Power Dissipation 3.0 D A Linear Derating Factor 0.71 mWC dv/dt Peak Diode Recovery dv/dt 15 V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Junction-to-Ambient (PCB mount)* 40 C/W JA R Junction-to-Ambient 110 JA Notes through are on page 10 www.irf.com 1 12/03/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 34 39 m V = 10V, I = 18A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D 20 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 33 S V = 25V, I = 18A fs DS D Q Total Gate Charge 37 56 I = 18A g D Q Gate-to-Source Charge 10 nC V = 50V gs DS Q Gate-to-Drain Mille) Charge 11 V = 10V, gd GS t Turn-On Delay Time 12 V = 50V d(on) DD t Rise Time 27 I = 18A r D ns t Turn-Off Delay Time 40 R = 9.1 d(off) G t Fall Time 13 V = 10V f GS C Input Capacitance 1690 V = 0V iss GS C Output Capacitance 220 V = 25V oss DS C Reverse Transfer Capacitance 26 pF = 1.0MHz rss C Output Capacitance 1640 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 130 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 250 V = 0V, V = 0V to 80V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 140 mJ AS I Avalanche Current 18 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 31 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 125 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 18A, V = 0V SD J S GS t Reverse Recovery Time 84 ns T = 25C, I = 18A rr J F Q Reverse RecoveryCharge 260 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com