X-On Electronics has gained recognition as a prominent supplier of IRFR3505PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR3505PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR3505PBF Infineon

IRFR3505PBF electronic component of Infineon
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See Product Specifications
Part No.IRFR3505PBF
Manufacturer: Infineon
Category: MOSFETs
Description: International Rectifier MOSFET 55V 1 N-CH HEXFET 13mOhms 62nC
Datasheet: IRFR3505PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.5425
10 : USD 1.4443
100 : USD 1.1011
500 : USD 0.9867
1000 : USD 0.8411
2500 : USD 0.8008
5000 : USD 0.8008
10000 : USD 0.7865
25000 : USD 0.7384
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1869
3 : USD 0.8956
33 : USD 0.8349
N/A

Obsolete
0
MOQ : 39
Multiples : 1
39 : USD 0.899
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
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Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFR3505PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR3505PBF and other electronic components in the MOSFETs category and beyond.

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PD - 95511B IRFR3505PbF IRFU3505PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V = 55V DSS 175C Operating Temperature Fast Switching R = 0.013 Repetitive Avalanche Allowed up to Tjmax DS(on) G Lead-Free I = 30A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight D-Pak I-Pak lead version (IRFU series) is for through-hole mounting IRFR3505PbF IRFU3505PbF applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon limited) 71 D C GS I T = 100C Continuous Drain Current, V 10V (See Fig.9) 49 A D C GS I T = 25C Continuous Drain Current, V 10V (Package limited) 30 D C GS I Pulsed Drain Current 280 DM P T = 25C Power Dissipation 140 W D C Linear Derating Factor 0.92 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 210 mJ AS E (tested) Single Pulse Avalanche Energy Tested Value 410 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.09 JC R Junction-to-Ambient (PCB mount) 40 C/W JA R Junction-to-Ambient 110 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.011 0.013 V = 10V, I = 30A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 41 S V = 25V, I = 30A fs DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 62 93 I = 30A g D Q Gate-to-Source Charge 17 26 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 22 33 V = 10V gd GS t Turn-On Delay Time 13 V = 28V d(on) DD t Rise Time 74 I = 30A r D ns t Turn-Off Delay Time 43 R = 6.8 d(off) G t Fall Time 54 V = 10V f GS D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 2030 V = 0V iss GS C Output Capacitance 470 pF V = 25V oss DS C Reverse Transfer Capacitance 91 = 1.0MHz, See Fig. 5 rss C Output Capacitance 2600 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 330 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 630 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 71 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 280 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 30A, V = 0V SD J S GS t Reverse Recovery Time 70 105 ns T = 25C, I = 30A, V = 28V rr J F DD Q Reverse RecoveryCharge 180 270 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes through are on page 11 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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