PD - 95511B IRFR3505PbF IRFU3505PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V = 55V DSS 175C Operating Temperature Fast Switching R = 0.013 Repetitive Avalanche Allowed up to Tjmax DS(on) G Lead-Free I = 30A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight D-Pak I-Pak lead version (IRFU series) is for through-hole mounting IRFR3505PbF IRFU3505PbF applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon limited) 71 D C GS I T = 100C Continuous Drain Current, V 10V (See Fig.9) 49 A D C GS I T = 25C Continuous Drain Current, V 10V (Package limited) 30 D C GS I Pulsed Drain Current 280 DM P T = 25C Power Dissipation 140 W D C Linear Derating Factor 0.92 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 210 mJ AS E (tested) Single Pulse Avalanche Energy Tested Value 410 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.09 JC R Junction-to-Ambient (PCB mount) 40 C/W JA R Junction-to-Ambient 110 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.011 0.013 V = 10V, I = 30A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 41 S V = 25V, I = 30A fs DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 62 93 I = 30A g D Q Gate-to-Source Charge 17 26 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 22 33 V = 10V gd GS t Turn-On Delay Time 13 V = 28V d(on) DD t Rise Time 74 I = 30A r D ns t Turn-Off Delay Time 43 R = 6.8 d(off) G t Fall Time 54 V = 10V f GS D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 2030 V = 0V iss GS C Output Capacitance 470 pF V = 25V oss DS C Reverse Transfer Capacitance 91 = 1.0MHz, See Fig. 5 rss C Output Capacitance 2600 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 330 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 630 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 71 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 280 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 30A, V = 0V SD J S GS t Reverse Recovery Time 70 105 ns T = 25C, I = 30A, V = 28V rr J F DD Q Reverse RecoveryCharge 180 270 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes through are on page 11 2 www.irf.com