IRFR3704ZPbF IRFU3704ZPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Processor Power V R max Qg DSS DS(on) High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 8.4m 9.3nC for Telecom and Industrial Use Lead-Free Benefits Very Low R at 4.5V V DS(on) GS Ultra-Low Gate Impedance D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR3704Z IRFU3704Z and Current Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 20 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 60 A D C GS I T = 100C Continuous Drain Current, V 10V 42 D C GS I 240 DM Pulsed Drain Current P T = 25C 48 W D C Maximum Power Dissipation P T = 100C 24 C Maximum Power Dissipation D 0.32 Linear Derating Factor W/C T C Operating Junction and -55 to + 175 J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R 3.1 C/W JC Junction-to-Case R Junction-to-Ambient (PCB Mount) 50 JA R 110 JA Junction-to-Ambient Notes through are on page 11 www.irf.com 1 12/03/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.015 V/C Reference to 25C, I = 1mA DSS J D R m DS(on) Static Drain-to-Source On-Resistance 6.7 8.4 V = 10V, I = 15A GS D 9.2 11.4 V = 4.5V, I = 12A GS D V GS(th) Gate Threshold Voltage 1.65 2.1 2.55 V V = V , I = 250A DS GS D V /T Gate Threshold Voltage Coefficient -5.5 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V =16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 41 S V = 10V, I = 12A DS D Q Total Gate Charge 9.3 14 g Q Pre-Vth Gate-to-Source Charge 3.0 V = 10V gs1 DS Q Post-Vth Gate-to-Source Charge 1.1 nC V = 4.5V gs2 GS Q gd Gate-to-Drain Charge 2.7 I = 12A D Q godr Gate Charge Overdrive 2.5 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 3.8 Q oss Output Charge 5.6 nC V = 10V, V = 0V DS GS t Turn-On Delay Time 41 V = 10V, V = 4.5V d(on) DD GS t Rise Time 8.9 I = 12A r D t d(off) Turn-Off Delay Time 4.9 ns Clamped Inductive Load t f Fall Time 12 C iss Input Capacitance 1190 V = 0V GS C oss Output Capacitance 380 pF V = 10V DS C rss Reverse Transfer Capacitance 170 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 41 mJ Avalanche Current I AR 12 A Repetitive Avalanche Energy E AR 4.8 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 60 I S MOSFET symbol D Continuous Source Current (Body Diode) A showing the G I SM 240 integral reverse Pulsed Source Current S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t 1319ns T = 25C, I = 12A, V = 10V rr Reverse Recovery Time J F DD Q di/dt = 100A/s rr 4.2 6.3 nC Reverse Recovery Charge t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Forward Turn-On Time 2 www.irf.com