X-On Electronics has gained recognition as a prominent supplier of IRFR3707ZPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR3707ZPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR3707ZPBF Infineon

IRFR3707ZPBF electronic component of Infineon
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Part No.IRFR3707ZPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC
Datasheet: IRFR3707ZPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
75: USD 0.5148 ea
Line Total: USD 38.61 
Availability - 0
MOQ: 75  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 75
Multiples : 1
75 : USD 0.5148
150 : USD 0.4212
750 : USD 0.3978
1500 : USD 0.392

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 72
Multiples : 1
72 : USD 1.0578
100 : USD 0.9661

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFR3707ZPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR3707ZPBF and other electronic components in the MOSFETs category and beyond.

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IRFR3707ZPbF IRFU3707ZPbF Applications High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Processor Power V R max Qg DSS DS(on) High Frequency Isolated DC-DC Converters with Synchronous Rectification 9.5m 30V 9.6nC for Telecom and Industrial Use Lead-Free Benefits Very Low R at 4.5V V DS(on) GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3707ZPbF IRFU3707ZPbF Absolute Maximum Ratings Parameter Max. Units V DS 30 V Drain-to-Source Voltage V 20 Gate-to-Source Voltage GS I T = 25C 56 A C Continuous Drain Current, V 10V D GS I T = 100C C Continuous Drain Current, V 10V 39 D GS I 220 Pulsed Drain Current DM P T = 25C W C Maximum Power Dissipation 50 D P T = 100C C Maximum Power Dissipation 25 D Linear Derating Factor 0.33 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R 3.0 C/W JC Junction-to-Case R 50 JA Junction-to-Ambient (PCB Mount) R 110 JA Junction-to-Ambient Notes through are on page 11 www.irf.com 1 05/14/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 7.5 9.5 V = 10V, I = 15A DS(on) GS D 10 12.5 V = 4.5V, I = 12A GS D V GS(th) Gate Threshold Voltage 1.35 1.80 2.25 V V = V , I = 25A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -5.0 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 71 S V = 15V, I = 12A DS D Q Total Gate Charge 9.6 14 g Q Pre-Vth Gate-to-Source Charge 2.6 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 0.90 nC V = 4.5V gs2 GS Q gd Gate-to-Drain Charge 3.5 I = 12A D Q godr Gate Charge Overdrive 2.6 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 4.4 Q oss Output Charge 5.8 nC V = 15V, V = 0V DS GS t d(on) Turn-On Delay Time 8.0 V = 16V, V = 4.5V DD GS t Rise Time 11 I = 12A r D t Turn-Off Delay Time 12 ns Clamped Inductive Load d(off) t Fall Time 3.3 f C Input Capacitance 1150 V = 0V iss GS C oss Output Capacitance 260 pF V = 15V DS C rss Reverse Transfer Capacitance 120 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 42 mJ Avalanche Current I AR 12 A Repetitive Avalanche Energy E AR 5.0 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 56 D I MOSFET symbol S Continuous Source Current (Body Diode) showing the A G I SM 220 integral reverse Pulsed Source Current S (Body Diode) p-n junction diode. V SD 1.0 V T = 25C, I = 12A, V = 0V Diode Forward Voltage J S GS t rr 2538ns T = 25C, I = 12A, V = 15V Reverse Recovery Time DD J F Q di/dt = 100A/s 17 26 nC rr Reverse Recovery Charge t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Forward Turn-On Time 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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