IRFR3707ZPbF IRFU3707ZPbF Applications High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Processor Power V R max Qg DSS DS(on) High Frequency Isolated DC-DC Converters with Synchronous Rectification 9.5m 30V 9.6nC for Telecom and Industrial Use Lead-Free Benefits Very Low R at 4.5V V DS(on) GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3707ZPbF IRFU3707ZPbF Absolute Maximum Ratings Parameter Max. Units V DS 30 V Drain-to-Source Voltage V 20 Gate-to-Source Voltage GS I T = 25C 56 A C Continuous Drain Current, V 10V D GS I T = 100C C Continuous Drain Current, V 10V 39 D GS I 220 Pulsed Drain Current DM P T = 25C W C Maximum Power Dissipation 50 D P T = 100C C Maximum Power Dissipation 25 D Linear Derating Factor 0.33 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R 3.0 C/W JC Junction-to-Case R 50 JA Junction-to-Ambient (PCB Mount) R 110 JA Junction-to-Ambient Notes through are on page 11 www.irf.com 1 05/14/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 7.5 9.5 V = 10V, I = 15A DS(on) GS D 10 12.5 V = 4.5V, I = 12A GS D V GS(th) Gate Threshold Voltage 1.35 1.80 2.25 V V = V , I = 25A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -5.0 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 71 S V = 15V, I = 12A DS D Q Total Gate Charge 9.6 14 g Q Pre-Vth Gate-to-Source Charge 2.6 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 0.90 nC V = 4.5V gs2 GS Q gd Gate-to-Drain Charge 3.5 I = 12A D Q godr Gate Charge Overdrive 2.6 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 4.4 Q oss Output Charge 5.8 nC V = 15V, V = 0V DS GS t d(on) Turn-On Delay Time 8.0 V = 16V, V = 4.5V DD GS t Rise Time 11 I = 12A r D t Turn-Off Delay Time 12 ns Clamped Inductive Load d(off) t Fall Time 3.3 f C Input Capacitance 1150 V = 0V iss GS C oss Output Capacitance 260 pF V = 15V DS C rss Reverse Transfer Capacitance 120 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 42 mJ Avalanche Current I AR 12 A Repetitive Avalanche Energy E AR 5.0 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 56 D I MOSFET symbol S Continuous Source Current (Body Diode) showing the A G I SM 220 integral reverse Pulsed Source Current S (Body Diode) p-n junction diode. V SD 1.0 V T = 25C, I = 12A, V = 0V Diode Forward Voltage J S GS t rr 2538ns T = 25C, I = 12A, V = 15V Reverse Recovery Time DD J F Q di/dt = 100A/s 17 26 nC rr Reverse Recovery Charge t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Forward Turn-On Time 2 www.irf.com