The IRFR3710ZTRPBF is a N-Channel MOSFET, manufactured by Infineon Technologies. It is a through-hole device that features excellent channel charge performance, high drain current capability and low on-state resistance. With its power dissipation of 74 W, the FET is suitable for the switching and protection of voltage ranges up to 40 V. Its source to drain breakdown voltage is rated at 37 V. The device also has a drain to source saturation voltage of <3 V. Thanks to its low on-state resistance and low threshold voltage, this FET can be used as an efficient switch, allowing for high power applications such as pulse power supplies. This device is suitable for use in a wide range of applications including switching, isolation, level-shifting, and sensing.