PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET Power MOSFET Features D Advanced Process Technology V = 40V DSS Ultra Low On-Resistance 175C Operating Temperature R = 5.5m DS(on) Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free I = 42A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design D-Pak I-Pak an extremely efficient and reliable device for use in a IRFR4104PbF IRFU4104PbF wide variety of applications. Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C GS 119 D C Continuous Drain Current, V 10V I T = 100C 84 A GS D C (Package Limited) I T = 25C Continuous Drain Current, V 10V GS 42 D C Pulsed Drain Current I 480 DM P T = 25C Power Dissipation 140 W D C Linear Derating Factor 0.95 W/C V Gate-to-Source Voltage V 20 GS Single Pulse Avalanche Energy E AS (Thermally limited) 145 mJ Single Pulse Avalanche Energy Tested Value E (Tested ) AS 310 Avalanche Current I AR See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.05 JC Junction-to-Ambient (PCB mount) R 40 C/W JA RJunction-to-Ambient 110 JA HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.032 V/C Reference to 25C, I = 1mA D R m Static Drain-to-Source On-Resistance 4.3 5.5 V = 10V, I = 42A DS(on) GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 58 S V = 10V, I = 42A DS D I DSS Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA = 20V GSS V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 59 89 I = 42A g D Q gs Gate-to-Source Charge 19 nC V = 32V DS Q Gate-to-Drain Mille) Charge 24 V = 10V gd GS t d(on) Turn-On Delay Time 17 V = 20V DD t Rise Time 69 I = 42A r D t d(off) Turn-Off Delay Time 37 ns R = 6.8 G t Fall Time 36 V = 10V f GS L D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) L S Internal Source Inductance 7.5 from package and center of die contact C iss Input Capacitance 2950 V = 0V GS C Output Capacitance 660 V = 25V oss DS C rss Reverse Transfer Capacitance 370 pF = 1.0MHz C Output Capacitance 2130 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 590 V = 0V, V = 32V, = 1.0MHz GS DS C eff. Effective Output Capacitance 850 V = 0V, V = 0V to 32V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 42 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 480 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 42A, V = 0V SD J S GS t Reverse Recovery Time 28 42 ns T = 25C, I = 42A, V = 20V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 24 36 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com