X-On Electronics has gained recognition as a prominent supplier of IRFR4105TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR4105TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR4105TRPBF Infineon

Hot IRFR4105TRPBF electronic component of Infineon
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See Product Specifications
Part No.IRFR4105TRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Datasheet: IRFR4105TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.3853 ea
Line Total: USD 7.71 
Availability - 485
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
7760
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.429
4000 : USD 0.429
6000 : USD 0.429
8000 : USD 0.429
10000 : USD 0.429

9
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2618
10 : USD 1.0712
30 : USD 0.9652
100 : USD 0.8458
500 : USD 0.7938
1000 : USD 0.7687

3686
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1075
10 : USD 0.8326
100 : USD 0.6061
500 : USD 0.5106
1000 : USD 0.4727
2000 : USD 0.4681
4000 : USD 0.4542

620
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 55
Multiples : 1
55 : USD 0.7459

485
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 20
Multiples : 1
20 : USD 0.3853
4000 : USD 0.3802

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
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Rds On
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Gate Charge Qg
Rise Time
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Typical Turn-Off Delay Time
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We are delighted to provide the IRFR4105TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR4105TRPBF and other electronic components in the MOSFETs category and beyond.

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PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance HEXFET Power MOSFET Surface Mount (IRFR4105) Straight Lead (IRFU4105) D V = 55V Fast Switching DSS Fully Avalanche Rated Lead-Free R = 0.045 DS(on) G Description Fifth Generation HEXFETs from International Rectifier I = 27A D S utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. D-PAK I-PAK The straight lead version (IRFU series) is for through- TO-252AA TO-251AA hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 27 D C GS I T = 100C Continuous Drain Current, V 10V 19 A D C GS I Pulsed Drain Current 100 DM P T = 25C Power Dissipation 68 W D C Linear Derating Factor 0.45 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 65 mJ AS I Avalanche Current 16 A AR E Repetitive Avalanche Energy 6.8 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.2 JC R Junction-to-Ambient (PCB mount) ** 50 C/W JA R Junction-to-Ambient 110 JA www.irf.com 1 IRFR/U4105PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.045 V = 10V, I = 16A GS D DS(on) V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 6.5 S V = 25V, I = 16A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 34 I = 16A g D Q Gate-to-Source Charge 6.8 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 14 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 7.0 V = 28V d(on) DD t Rise Time 49 I = 16A r D ns t Turn-Off Delay Time 31 R = 18 d(off) G t Fall Time 40 R = 1.8, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 nH D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 700 V = 0V iss GS C Output Capacitance 240 pF V = 25V oss DS C Reverse Transfer Capacitance 100 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 27 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 100 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.6 V T = 25C, I = 16A, V = 0V SD J S GS t Reverse Recovery Time 57 86 ns T = 25C, I = 16A rr J F Q Reverse RecoveryCharge 130 200 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2% max. junction temperature. ( See fig. 11 ) Calculated continuous current based on maximum allowable junction V = 25V, starting T = 25C, L = 410H DD J temperature Package limitation current = 20A R = 25, I = 16A. (See Figure 12) G AS This is applied for I-PAK, Ls of D-PAK is measured between lead and I 16A, di/dt 420A/s, V V , SD DD (BR)DSS center of die contact T 175C J Uses IRFZ34N data and test conditions ** When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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