IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Q Results in Simple Drive
g
V (V) 500
DS
Requirement
R ( )V = 10 V 1.7
DS(on) GS
Improved Gate, Avalanche and Dynamic
Q (Max.) (nC) 24
g
dV/dt Ruggedness
Q (nC) 6.5
gs
Fully Characterized Capacitance and
Q (nC) 13
gd
Avalanche Voltage and Current
Configuration Single
Effective C Specified
oss
D Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DPAK IPAK
(TO-252) (TO-251)
D APPLICATIONS
D
Switch Mode Power Supply (SMPS)
G
Uninterruptible Power Supply
S
G S
High Speed Power Switching
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and
a a a
SiHFR430A-GE3 SiHFR430ATR-GE3 SiHFR430ATRL-GE3 SiHFR430ATRR-GE3 SiHFU430A-GE3
Halogen-free
a a a
IRFR430APbF IRFR430ATRPbF IRFR430ATRLPbF IRFR430ATRRPbF IRFU430APbF
Lead (Pb)-free
a a a
SiHFR430A-E3 SiHFR430AT-E3 SiHFR430ATL-E3 SiHFR430ATR-E3 SiHFU430A-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage V 500
DS
V
Gate-Source Voltage V 30
GS
T = 25 C 5.0
C
Continuous Drain Current V at 10 V I
GS D
T = 100 C 3.2 A
C
a
Pulsed Drain Current I 20
DM
Linear Derating Factor 0.91 W/C
b
Single Pulse Avalanche Energy E 130 mJ
AS
a
Repetitive Avalanche Current I 5.0 A
AR
a
Repetitive Avalanche Energy E 11 mJ
AR
Maximum Power Dissipation T = 25 C P 110 W
C D
c
Peak Diode Recovery dV/dt dV/dt 3.0 V/ns
Operating Junction and Storage Temperature Range T , T - 55 to + 150
J stg
C
d
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T = 25 C, L = 11 mH, R = 25 , I = 5.0 A (see fig. 12).
J g AS
c. I 5.0 A, dI/dt 320 A/s, V V , T 150 C.
SD DD DS J
d. 1.6 mm from case.
S12-0168-Rev. D, 04-Feb-13 Document Number: 91276
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLTYP. MAX. UNIT
Maximum Junction-to-Ambient R -62
thJA
Case-to-Sink, Flat, Greased Surface R 0.50 - C/W
thCS
Maximum Junction-to-Case (Drain) R -1.1
thJC
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V
DS GS D
V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.60 - V/C
DS DS J D
Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.5 V
GS(th) DS GS D
Gate-Source Leakage I V = 30 V - - 100 nA
GSS GS
V = 500 V, V = 0 V - - 25
DS GS
Zero Gate Voltage Drain Current I A
DSS
V = 400 V, V = 0 V, T = 125 C - - 250
DS GS J
b
Drain-Source On-State Resistance R V = 10 V I = 3.0 A -- 1.7
DS(on) GS D
Forward Transconductance g V = 50 V, I = 3.0 A 2.3 - - S
fs DS D
Dynamic
Input Capacitance C - 490 -
iss
V = 0 V,
GS
Output Capacitance C -7V = 25 V, 5- pF
oss DS
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance C -4.5-
rss
= 1.0 V, f = 1.0 MHz - 750 -
V
DS
Output Capacitance C
oss
V = 10 V V = 400 V, f = 1.0 MHz - 25 - pF
GS DS
c
Effective Output Capacitance C eff. V = 0 V to 400 V -51 -
oss DS
Total Gate Charge Q -- 24
g
I = 5.0 A, V = 400 V,
D DS
Gate-Source Charge Q --V = 10 V 6.5 nC
gs GS b
see fig. 6 and 13
Gate-Drain Charge Q --13
gd
Turn-On Delay Time t -8.7 -
d(on)
Rise Time t -27 -
r
V = 250 V, I = 5.0 A,
DD D
ns
b
R = 15 , R = 50 , see fig. 10
g D
Turn-Off Delay Time t -17-
d(off)
Fall Time t -16-
f
Drain-Source Body Diode Characteristics
MOSFET symbol
D
Continuous Source-Drain Diode Current I -- 5.0
S
showing the
A
G
integral reverse
a
Pulsed Diode Forward Current I -- 20
SM p - n junction diode
S
b
Body Diode Voltage V T = 25 C, I = 5.0 A, V = 0 V -- 1.5 V
SD J S GS
Body Diode Reverse Recovery Time t - 410 620 ns
rr
b
T = 25 C, I = 5.0 A, dI/dt = 100 A/s
J F
Body Diode Reverse Recovery Charge Q -1.4 2.1 C
rr
Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L )
on S D
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80 % V .
oss oss DS DS
S12-0168-Rev. D, 04-Feb-13 Document Number: 91276
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000