PD - 96141B IRFR540ZPbF Features IRFU540ZPbF Advanced Process Technology Ultra Low On-Resistance HEXFET Power MOSFET 175C Operating Temperature D Fast Switching V = 100V Repetitive Avalanche Allowed up to Tjmax DSS Lead-Free Halogen-Free R = 28.5m DS(on) G Description I = 35A This HEXFET Power MOSFET utilizes the latest D S processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. D-Pak I-Pak IRFR540ZPbF IRFU540ZPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C 35 GS D C I T = 100C Continuous Drain Current, V 10V (Silicon Limited) GS 25 A D C Pulsed Drain Current I 140 DM P T = 25C Power Dissipation 91 W D C Linear Derating Factor 0.61 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E 39 mJ AS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) 75 AS Avalanche Current I See Fig.12a, 12b, 15, 16 A AR Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Reflow Soldering Temperature, for 10 seconds 300 Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.64 JC Junction-to-Ambient (PCB mount) R 40 C/W JA Junction-to-Ambient R 110 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.092 V/C Reference to 25C, I = 1mA (BR)DSS J D Static Drain-to-Source On-Resistance 22.5 28.5 m = 10V, I = 21A R V DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 50A GS(th) DS GS D gfs Forward Transconductance 28 S V = 25V, I = 21A DS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 39 59 I = 21A g D Q Gate-to-Source Charge 11 nC V = 50V gs DS Q Gate-to-Drain Mille) Charge 12 V = 10V gd GS t Turn-On Delay Time 14 V = 50V d(on) DD t Rise Time 42 I = 21A r D t Turn-Off Delay Time 43 ns R = 13 d(off) G t Fall Time 34 V = 10V f GS L Internal Drain Inductance 4.5 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C Input Capacitance 1690 V = 0V iss GS C Output Capacitance 180 V = 25V oss DS C Reverse Transfer Capacitance 100 pF = 1.0MHz rss C Output Capacitance 720 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 110 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 190 V = 0V, V = 0V to 80V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 35 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 140 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 21A, V = 0V SD J S GS t Reverse Recovery Time 32 48 ns T = 25C, I = 21A, V = 50V rr DD J F di/dt = 100A/s Q Reverse Recovery Charge 40 60 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com