X-On Electronics has gained recognition as a prominent supplier of IRFR5410TRPBF MOSFET across the USA, India, Europe, Australia, and various other global locations. IRFR5410TRPBF MOSFET are a product manufactured by Infineon. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRFR5410TRPBF Infineon

Hot IRFR5410TRPBF electronic component of Infineon
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See Product Specifications
Part No.IRFR5410TRPBF
Manufacturer: Infineon
Category: MOSFET
Description: MOSFET P Trench 100V 13A 4V @ 250uA 205 mΩ @ 7.8A,10V TO-252-2 (DPAK) RoHS
Datasheet: IRFR5410TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.609 ea
Line Total: USD 0.61

Availability - 7361
Ship by Thu. 15 Aug to Tue. 20 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1681
Ship by Thu. 08 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 1.7853
10 : USD 1.4401
25 : USD 1.4074
100 : USD 1.1085
250 : USD 1.0972
500 : USD 0.9352
1000 : USD 0.6851

178480
Ship by Thu. 08 Aug to Wed. 14 Aug
MOQ : 2000
Multiples : 2000
2000 : USD 0.533
4000 : USD 0.533
6000 : USD 0.533
8000 : USD 0.533
10000 : USD 0.533

7361
Ship by Thu. 15 Aug to Tue. 20 Aug
MOQ : 1
Multiples : 1
1 : USD 0.609
10 : USD 0.4927
30 : USD 0.4355
100 : USD 0.3857
500 : USD 0.3101
1000 : USD 0.3027

18363
Ship by Wed. 14 Aug to Fri. 16 Aug
MOQ : 1
Multiples : 1
1 : USD 1.3685
10 : USD 1.1213
100 : USD 0.9005
500 : USD 0.7613
1000 : USD 0.6566
2000 : USD 0.6325
4000 : USD 0.6325
10000 : USD 0.6083

2915
Ship by Thu. 08 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 1.599
10 : USD 1.3377
25 : USD 1.222
30 : USD 0.5525
83 : USD 0.5226

1681
Ship by Thu. 08 Aug to Wed. 14 Aug
MOQ : 14
Multiples : 1
14 : USD 1.4401
25 : USD 1.4074
100 : USD 1.1085
250 : USD 1.0972
500 : USD 0.9352
1000 : USD 0.6851

13034
Ship by Thu. 08 Aug to Wed. 14 Aug
MOQ : 33
Multiples : 1
33 : USD 1.2562
50 : USD 1.2058
100 : USD 1.1067
200 : USD 1.0725
500 : USD 1.0287
1000 : USD 0.7524
2000 : USD 0.715
4000 : USD 0.6728
8000 : USD 0.6712

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the IRFR5410TRPBF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR5410TRPBF and other electronic components in the MOSFET category and beyond.

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Infineon's IRFR5410TRPBF is a power MOSFET which utilizes advanced P-Trench technology with a new layout structure to improve switching performance. It is rated for a 100V breakdown voltage and 13A max continuous drain current, and has a low 4V @ 250uA gate threshold voltage for improved energy efficiency. It is also characterized by low-on-resistance of 205mO for high current flow and 7.8A max pulsed current. The MOSFET is housed in a 3-pin TO-252-2 (DPAK) package, which satisfies the strict RoHS standards and offers enhanced board-level reliability.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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