StrongIRFET IRFR7540PbF IRFU7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications V 60V DSS D BLDC Motor drive applications R typ. 4.0m DS(on) Battery powered circuits max 4.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications I 110A D (Silicon Limited) S Resonant mode power supplies I 90A D (Package Limited) OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters D S S D G G Benefits I-Pak Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D-Pak IRFU7540PbF Fully Characterized Capacitance and Avalanche SOA IRFR7540PbF Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity Tube 75 IRFR7540PbF Tape and Reel 2000 IRFR7540TRPbF IRFR7540PbF D-Pak Tape and Reel Left 3000 IRFR7540TRLPbF IRFU7540PbF I-Pak Tube 75 IRFU7540PbF 20 125 I = 66A D Limited by Package 100 15 75 10 T = 125C J 50 5 25 T = 25C J 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 V Gate -to -Source Voltage (V) T , Case Temperature (C) GS, C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback December 17, 2014 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRFR/U7540PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 110 D C GS T = 100C Continuous Drain Current, V 10V (Silicon Limited) 78 I D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 90 D C GS I Pulsed Drain Current 440* DM P T = 25C Maximum Power Dissipation 140 W D C Linear Derating Factor 0.95 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E Single Pulse Avalanche Energy 160 AS (Thermally limited) mJ E Single Pulse Avalanche Energy 273 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.05 JC R Junction-to-Ambient (PCB Mount) 50 C/W JA Junction-to-Ambient R 110 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 48 mV/C Reference to 25C, I = 1mA D (BR)DSS J 4.0 4.8 V = 10V, I = 66A GS D R Static Drain-to-Source On-Resistance m DS(on) 5.2 V = 6.0V, I = 33A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D 1.0 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.4 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 90A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 72H, R = 50, I = 66A, V =10V. Jmax J G AS GS I 66A, di/dt 1190A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994.please refer to application note to AN-994: