StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application Brushed motor drive applications D V 60V DSS BLDC motor drive applications Battery powered circuits R typ. 6.6m DS(on) Half-bridge and full-bridge topologies max 7.9m G Synchronous rectifier applications I 71A D (Silicon Limited) Resonant mode power supplies OR-ing and redundant power switches S I 56A D (Package Limited) DC/DC and AC/DC converters DC/AC inverters D Benefits S S D Improved gate, avalanche and dynamic dV/dt ruggedness G G Fully characterized capacitance and avalanche SOA I-Pak Enhanced body diode dV/dt and dI/dt capability D-Pak IRFU7546PbF IRFR7546PbF Lead-free, RoHS compliant G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 IRFR7546PbF IRFR7546PbF D-Pak Tape and Reel 2000 IRFR7546TRPbF IRFU7546PbF I-Pak Tube 75 IRFU7546PbF 20 80 I = 43A D Limited by package 15 60 T = 125C J 10 40 5 20 T = 25C J 0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFR/U7546PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 71 D C GS T = 100C Continuous Drain Current, V 10V (Silicon Limited) 50 I D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 56 D C GS I Pulsed Drain Current 280 DM P T = 25C Maximum Power Dissipation 99 W D C Linear Derating Factor 0.66 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Symbol Max. Units Parameter E Single Pulse Avalanche Energy 120 mJ AS (Thermally limited) E Single Pulse Avalanche Energy 178 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.52 JC R Junction-to-Ambient (PCB Mount) 50 C/W JA R Junction-to-Ambient 110 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 47 mV/C Reference to 25C, I = 1mA V /T (BR)DSS J D R Static Drain-to-Source On-Resistance 6.6 7.9 m V = 10V, I = 43A DS(on) GS D 8.5 V = 6.0V, I = 21A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D 1.0 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 1.5 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 130H, R = 50, I = 43A, V =10V. Jmax J G AS GS I 43A, di/dt 1020A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: