PD -97773 IRFR812TRPbF HEXFET Power MOSFET Applications Trr typ. V R typ. I DSS DS(on) D 500V 1.85 75ns 3.6A % Features and Benefits D-Pak IRFR812TRPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 3.6 D C GS I T = 100C Continuous Drain Current, V 10V 2.3 A D C GS I Pulsed Drain Current 14.4 DM P T = 25C Power Dissipation 78 W D C Linear Derating Factor 0.63 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 32 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 3.6 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 14.4 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 3.6A, V = 0V SD J S GS t Reverse Recovery Time 75 110 ns T = 25C, I = 3.6A rr J F = 125C, di/dt = 100A/s 94 140 T J Q Reverse Recovery Charge 135 200 nC T = 25C, I = 3.6A, V = 0V rr J S GS 220 330 T = 125C, di/dt = 100A/s J I RRM Reverse Recovery Current 3.2 4.8 A T = 25C, I = 3.6A, V = 0V J S GS di/dt = 100A/ s t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Notes through are on page 2 www.irf.com 1 4/10/12 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 500 V V = 0V, I = 250 A (BR)DSS GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.37 V/C Reference to 25C, I = 250 A D R DS(on) Static Drain-to-Source On-Resistance 1.85 2.2 V = 10V, I = 2.2A GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D I DSS Drain-to-Source Leakage Current 25 A V = 500V, V = 0V DS GS 2.0 mA V = 400V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 7.6 S V = 50V, I = 2.2A DS D Q Total Gate Charge 20 I = 3.6A g D Q gs Gate-to-Source Charge 7.3 nC V = 400V DS Q Gate-to-Drain Mille) Charge 7.1 V = 10V, See Fig.14a &14b gd GS t d(on) Turn-On Delay Time 14 V = 250V DD t r Rise Time 22 ns I = 3.6A D t Turn-Off Delay Time 24 R = 17 d(off) G t f Fall Time 17 V = 10V, See Fig. 15a & 15b GS C Input Capacitance 810 V = 0V iss GS C oss Output Capacitance 47 V = 25V DS C rss Reverse Transfer Capacitance 7.3 = 1.0MHz, See Fig. 5 C V = 0V, V = 1.0V, = 1.0MHz Output Capacitance 610 pF oss GS DS C V = 0V, V = 400V, = 1.0MHz oss Output Capacitance 16 GS DS C eff. Effective Output Capacitance 5.9 V = 0V,V = 0V to 400V oss GS DS C eff. (ER) oss Effective Output Capacitance 37 (Energy Related) Avalanche Characteristics Symbol Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 150 mJ Avalanche Current I 1.8 A AR Repetitive Avalanche Energy E AR 7.8 mJ Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R JC 1.6 Junction-to-Ambient (PCB mount) R JA 40 C/W Junction-to-Ambient R 110 JA Pulse width 300s duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time oss Repetitive rating pulse width limited by as C while V is rising from 0 to 80% V . oss DS DSS max. junction temperature. (See Fig. 11) C eff.(ER) is a fixed capacitance that stores the same energy Starting T = 25C, L = 93mH, R = 25, oss J G as C while V is rising from 0 to 80% V . oss DS DSS I = 1.8A. (See Figure 13). AS I = 3.6A, di/dt 520A/s, V V , SD DD (BR)DSS When mounted on 1 square PCB (FR-4 or G-10 Material) T 150C. J 2 www.irf.com