PD - 96433 IRFR825TRPbF HEXFET Power MOSFET Applications Trr typ. V R typ. I DSS DS(on) D 500V 1.05 92ns 6.0A % Features and Benefits D-Pak IRFR825TRPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V D C GS 6.0 I T = 100C Continuous Drain Current, V 10V D C GS 3.9 A I 24 DM Pulsed Drain Current P T = 25C D C Power Dissipation 119 W Linear Derating Factor 1.0 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 9.9 V/ns T Operating Junction and -55 to + 150 J T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D 6.0 (Body Diode) A showing the G I SM Pulsed Source Current integral reverse 24 S (Body Diode) p-n junction diode. V T = 25C, I = 6.0A, V = 0V SD Diode Forward Voltage 1.2 V J S GS t T = 25C, I = 6.0A Reverse Recovery Time 92 138 ns rr J F T = 125C, di/dt = 100A/ s 152 228 J Q T = 25C, I = 6.0A, V = 0V rr Reverse Recovery Charge 167 251 nC J S GS T = 125C, di/dt = 100A/ s 292 438 J T = 25C, I = 6.0A, V = 0V J S GS I di/dt = 100A/s Reverse Recovery Current 3.6 5.4 A RRM Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) t on Forward Turn-On Time Notes through are on page 2 www.irf.com 1 04/11/12 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V V = 0V, I = 250 A (BR)DSS Drain-to-Source Breakdown Voltage 500 V GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.33 V/C (BR)DSS J D V = 10V, I = 3.7A R Static Drain-to-Source On-Resistance 1.05 1.3 GS D DS(on) V V = V , I = 250A Gate Threshold Voltage 3.0 5.0 V DS GS D GS(th) V = 500V, V = 0V I Drain-to-Source Leakage Current 25 A DSS DS GS V = 400V, V = 0V, T = 125C 2.0 mA DS GS J V = 20V I Gate-to-Source Forward Leakage 100 GSS GS nA V = -20V Gate-to-Source Reverse Leakage -100 GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 50V, I = 3.7A gfs Forward Transconductance 7.5 S DS D Q I = 6.0A g Total Gate Charge 34 D V = 400V Q Gate-to-Source Charge 11 nC gs DS Q V = 10V, See Fig.14a &14b Gate-to-Drain Mille) Charge 14 GS gd V = 250V t Turn-On Delay Time 8.5 d(on) DD I = 6.0A t Rise Time 25 ns D r t R =7.5 Turn-Off Delay Time 30 G d(off) V = 10V, See Fig. 15a & 15b t Fall Time 20 f GS C V = 0V Input Capacitance 1346 GS iss C V = 25V oss Output Capacitance 76 DS C Reverse Transfer Capacitance 15 = 1.0KHz, See Fig. 5 rss C V = 0V, V = 1.0V, = 1.0MHz Output Capacitance 1231 pF GS DS oss V = 0V, V = 400V, = 1.0MHz C Output Capacitance 25 oss GS DS eff. C Effective Output Capacitance 51 oss C eff. (ER) V = 0V,V = 0V to 400V oss Effective Output Capacitance GS DS 43 (Energy Related) Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 178 mJ AS 3 I Avalanche Current A AR E Repetitive Avalanche Energy 11.9 mJ AR Thermal Resistance Parameter Typ. Max. Units R 1.05 Junction-to-Case JC R Junction-to-Ambient (PCB Mount) 50 JA C/W 110 R Junction-to-Ambient JA C eff. is a fixed capacitance that gives the same charging timeas oss Repetitive rating pulse width limited by max. C while V is rising from 0 to 80% V . C eff.(ER) is a fixed oss DS DSS oss junction temperature. (See Fig. 11) capacitance that stores the same energy as C while V is rising oss DS Starting T = 25C, L = 40mH, R = 25,I = 3.0A. J G AS from 0 to 80% V . DSS (See Figure 13). I = 6.0A, di/dt 416A/s, V V ,T 150C. SD DD (BR)DSS J When mounted on 1 square PCB (FR-4 or G-10 Material). For Pulse width 300 s duty cycle 2%. recommended footprint and soldering techniquea refer to applocation note AN- 994 echniques refer to application note AN-994. 2 www.irf.com