X-On Electronics has gained recognition as a prominent supplier of IRFS3006TRL7PP MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFS3006TRL7PP MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFS3006TRL7PP Infineon

IRFS3006TRL7PP electronic component of Infineon
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Part No.IRFS3006TRL7PP
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Datasheet: IRFS3006TRL7PP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.6557 ea
Line Total: USD 1324.56 
Availability - 5432
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
561
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 3.9208
10 : USD 3.4229
25 : USD 3.3618
100 : USD 2.9549
250 : USD 2.873
500 : USD 2.7378

11640
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 800
Multiples : 800
800 : USD 2.678
1600 : USD 2.639

12
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 3.1946
10 : USD 2.7626
30 : USD 2.4931
100 : USD 2.2159
500 : USD 2.0897
800 : USD 2.0362

3380
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 4.268
10 : USD 3.322
25 : USD 3.3
100 : USD 2.827
250 : USD 2.827
500 : USD 2.728
800 : USD 2.706
2400 : USD 2.64
4800 : USD 2.618

197880
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 800
Multiples : 800
800 : USD 3.4366

5432
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 800
Multiples : 800
800 : USD 1.6557
2400 : USD 1.6515

776
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 9
Multiples : 1
9 : USD 4.6963
10 : USD 4.095
50 : USD 4.03
100 : USD 3.5425
200 : USD 3.315
500 : USD 3.2825

13968
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 117
Multiples : 1
117 : USD 4.1925
500 : USD 4.0137
1000 : USD 3.7863

561
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 3
Multiples : 1
3 : USD 3.9208
10 : USD 3.4229
25 : USD 3.3618
100 : USD 2.9549
250 : USD 2.873
500 : USD 2.7378

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the IRFS3006TRL7PP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFS3006TRL7PP and other electronic components in the MOSFETs category and beyond.

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96187 IRFS3006-7PPbF HEXFET Power MOSFET Applications D V 60V DSS High Efficiency Synchronous Rectification in SMPS R typ. 1.5m DS(on) Uninterruptible Power Supply max. 2.1m High Speed Power Switching G Hard Switched and High Frequency Circuits I 293A D (Silicon Limited) S I 240A D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 293 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 207 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I Pulsed Drain Current 1172 DM P T = 25C 375 W Maximum Power Dissipation D C Linear Derating Factor 2.5 W/C V 20 V GS Gate-to-Source Voltage dv/dt Peak Diode Recovery 11 V/ns T -55 to + 175 J Operating Junction and T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 303 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 0.4 C/W R Junction-to-Ambient (PCB Mount) 40 JA www.irf.com 1 10/06/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.5 2.1 V = 10V, I = 168A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.1 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 290 S V = 25V, I = 168A DS D Q Total Gate Charge 200 300 I = 168A g D Q Gate-to-Source Charge 37 V = 30V gs DS nC Q Gate-to-Drain Mille) Charge 60 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 140 I = 168A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 14 V = 39V d(on) DD t Rise Time 61 = 168A I r D ns t Turn-Off Delay Time 118 R = 2.7 d(off) G t Fall Time 69 V = 10V f GS C Input Capacitance 8850 V = 0V iss GS C Output Capacitance 1007 V = 50V oss DS C Reverse Transfer Capacitance 525 = 1.0MHz (See Fig 5) rss pF C eff. (ER) 1460 V = 0V, V = 0V to 48V (See Fig 11) oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 1915 V = 0V, V = 0V to 48V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 293 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1172 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 168A, V = 0V SD J S GS t T = 25C V = 51V, Reverse Recovery Time 44 rr J R ns 48 T = 125C I = 168A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 51 rr J nC T = 125C 62 J I Reverse Recovery Current 2.03 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Pulse width 400s duty cycle 2%. Calcuted continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time temperature Bond wire current limit is 240A. Note that current oss limitation arising from heating of the device leds may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For Limited by T , starting T = 25C, L = 0.021mH Jmax J recommended footprint and soldering techniquea refer to applocation R = 25, I = 168A, V =10V. Part not recommended for use note AN-994 echniques refer to application note AN-994. GS G AS above this value . I 168A, di/dt 1410 A/s, V V , T 175C. JC SD DD (BR)DSS J 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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