96187 IRFS3006-7PPbF HEXFET Power MOSFET Applications D V 60V DSS High Efficiency Synchronous Rectification in SMPS R typ. 1.5m DS(on) Uninterruptible Power Supply max. 2.1m High Speed Power Switching G Hard Switched and High Frequency Circuits I 293A D (Silicon Limited) S I 240A D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 293 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 207 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I Pulsed Drain Current 1172 DM P T = 25C 375 W Maximum Power Dissipation D C Linear Derating Factor 2.5 W/C V 20 V GS Gate-to-Source Voltage dv/dt Peak Diode Recovery 11 V/ns T -55 to + 175 J Operating Junction and T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 303 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 0.4 C/W R Junction-to-Ambient (PCB Mount) 40 JA www.irf.com 1 10/06/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.5 2.1 V = 10V, I = 168A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.1 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 290 S V = 25V, I = 168A DS D Q Total Gate Charge 200 300 I = 168A g D Q Gate-to-Source Charge 37 V = 30V gs DS nC Q Gate-to-Drain Mille) Charge 60 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 140 I = 168A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 14 V = 39V d(on) DD t Rise Time 61 = 168A I r D ns t Turn-Off Delay Time 118 R = 2.7 d(off) G t Fall Time 69 V = 10V f GS C Input Capacitance 8850 V = 0V iss GS C Output Capacitance 1007 V = 50V oss DS C Reverse Transfer Capacitance 525 = 1.0MHz (See Fig 5) rss pF C eff. (ER) 1460 V = 0V, V = 0V to 48V (See Fig 11) oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 1915 V = 0V, V = 0V to 48V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 293 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1172 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 168A, V = 0V SD J S GS t T = 25C V = 51V, Reverse Recovery Time 44 rr J R ns 48 T = 125C I = 168A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 51 rr J nC T = 125C 62 J I Reverse Recovery Current 2.03 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Pulse width 400s duty cycle 2%. Calcuted continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time temperature Bond wire current limit is 240A. Note that current oss limitation arising from heating of the device leds may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For Limited by T , starting T = 25C, L = 0.021mH Jmax J recommended footprint and soldering techniquea refer to applocation R = 25, I = 168A, V =10V. Part not recommended for use note AN-994 echniques refer to application note AN-994. GS G AS above this value . I 168A, di/dt 1410 A/s, V V , T 175C. JC SD DD (BR)DSS J 2 www.irf.com