IRFS3107PbF IRFSL3107PbF HEXFET Power MOSFET Applications D V 75V DSS High Efficiency Synchronous Rectification in SMPS R typ. 2.5m DS(on) Uninterruptible Power Supply max. High Speed Power Switching 3.0m Hard Switched and High Frequency Circuits G I 230A D (Silicon Limited) I 195A S D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D D Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S S D Lead-Free G G 2 TO-262 D Pak IRFSL3107PbF IRFS3107PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 230 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 160 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I 900 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 370 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS Peak Diode Recovery 14 dv/dt V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 300 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 JC R Junction-to-Ambient (PCB Mount) 40 C/W JA www.irf.com 1 5/2/11 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.09 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 2.5 3.0 m V = 10V, I = 140A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 1.2 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 230 S V = 50V, I = 140A DS D Q Total Gate Charge 160 240 nC I = 140A g D Q Gate-to-Source Charge 38 V =38V gs DS Q Gate-to-Drain Mille) Charge 54 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 106 I = 140A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 19 ns V = 49V d(on) DD t Rise Time 110 I = 140A r D t Turn-Off Delay Time 99 R = 2.7 d(off) G t Fall Time 100 V = 10V f GS C Input Capacitance 9370 pF V = 0V iss GS C Output Capacitance 840 V = 50V oss DS C Reverse Transfer Capacitance 580 = 1.0 MHz, See Fig. 5 rss C eff. (ER) 1130 V = 0V, V = 0V to 60V , See Fig. 11 Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 1500 V = 0V, V = 0V to 60V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 230 A MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current 900 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 140A, V = 0V SD J S GS t T = 25C V = 64V, Reverse Recovery Time 54 ns rr J R T = 125C I = 140A 60 J F di/dt = 100A/ s Q Reverse Recovery Charge 103 nC T = 25C rr J 132 T = 125C J I Reverse Recovery Current 3.6 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 140A, di/dt 1380A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 195A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.045mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom R = 25, I = 140A, V =10V. Part not recommended for use mended footprint and soldering techniques refer to application note AN-994. GS G AS above this value . JC 2 www.irf.com