PD- 93805B IRFB31N20D IRFS31N20D SMPS MOSFET IRFSL31N20D HEXFET Power MOSFET Applications V R max I DSS DS(on) D l High frequency DC-DC converters 200V 0.082 31A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) 2 TO-220AB D Pak TO-262 l Fully Characterized Avalanche Voltage IRFB31N20D IRFS31N20D IRFSL31N20D and Current Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 31 D C GS I T = 100C Continuous Drain Current, V 10V 21 A D C GS I Pulsed Drain Current 124 DM P T = 25C Power Dissipation 3.1 W D A P T = 25C Power Dissipation 200 D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 2.1 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) Typical SMPS Topologies l Telecom 48V Input Forward Converters Notes through are on page 11 www.irf.com 1 2/14/00IRFB/IRFS/IRFSL31N20D Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.25 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.082 V = 10V, I = 18A DS(on) GS D V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GS(th) DS GS D 25 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 17 S V = 50V, I = 18A fs DS D Q Total Gate Charge 70 110 I = 18A g D Q Gate-to-Source Charge 18 27 nC V = 160V gs DS Q Gate-to-Drain Mille) Charge 33 49 V = 10V, gd GS t Turn-On Delay Time 16 V = 100V d(on) DD t Rise Time 38 I = 18A r D ns t Turn-Off Delay Time 26 R = 2.5 d(off) G t Fall Time 10 R = 5.4 f D C Input Capacitance 2370 V = 0V iss GS C Output Capacitance 390 V = 25V oss DS C Reverse Transfer Capacitance 78 pF = 1.0MHz rss C Output Capacitance 2860 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 150 V = 0V, V = 160V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 170 V = 0V, V = 0V to 160V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 420 mJ AS I Avalanche Current 18 A AR E Repetitive Avalanche Energy 20 mJ AR Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient 40 JA Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 31 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 124 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 18A, V = 0V SD J S GS t Reverse Recovery Time 200 300 ns T = 25C, I = 18A rr J F Q Reverse RecoveryCharge 1.7 2.6 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com