IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D V 75V High Efficiency Synchronous Rectification in DSS SMPS R typ. 3.3m DS(on) Uninterruptible Power Supply max. 4.1m G High Speed Power Switching I 170A D (Silicon Limited) Hard Switched and High Frequency Circuits S I 120A D (Package Limited) Benefits D D Improved Gate, Avalanche and Dynamic D dv/dt Ruggedness Fully Characterized Capacitance and S Avalanche SOA S S D D G Enhanced body diode dV/dt and dI/dt G G Capability 2 TO-220AB D Pak TO-262 Lead-Free IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF RoHS Compliant, Halogen-Free GD S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFB3207ZPbF TO-220 Tube 50 IRFB3207ZPbF IRFSL3207ZPbF TO-262 Tube 50 IRFSL3207ZPbF Tube 50 IRFS3207ZPbF IRFS3207ZPbF D2Pak Tape and Reel Left 800 IRFS3207ZTRLPbF Tape and Reel Right 800 IRFS3207ZTRRPbF Absolute Maximum Ratings Symbol Parameter Max. Units 170 I T = 25C Continuous Drain Current, VGS 10V (Silicon Limited) D C I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 120 A D C GS I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 120 D C GS I Pulsed Drain Current 670 DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C 20 V Gate-to-Source Voltage V GS 16 Peak Diode Recovery dv/dt V/ns -55 to + 175 T Operating Junction and C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 170 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.50 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W CS R Junction-to-Ambient, TO-220 62 JA 2 R 40 Junction-to-Ambient (PCB Mount) , D Pak JA 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback August 18, 2015 IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.091 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.3 4.1 V = 10V, I = 75A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D R Internal Gate Resistance 0.80 G(int) I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 280 S V = 50V, I = 75A DS D Q Total Gate Charge 120 170 nC I = 75A g D Q Gate-to-Source Charge 27 V = 38V gs DS Q Gate-to-Drain Mille) Charge 33 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 87 I = 75A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 20 ns V = 49V d(on) DD t Rise Time 68 I = 75A r D t Turn-Off Delay Time 55 R = 2.7 d(off) G t Fall Time 68 V = 10V f GS C Input Capacitance 6920 pF V = 0V iss GS C Output Capacitance 600 V = 50V oss DS C Reverse Transfer Capacitance 270 = 1.0MHz rss C eff. (ER) 770 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 960 V = 0V, V = 0V to 60V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current A MOSFET symbol S 170 (Body Diode) showing the G I Pulsed Source Current 670 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 36 54 ns T = 25C V = 64V, rr J R 41 62 T = 125C I = 75A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 50 75 nC rr J T = 125C 67 100 J I Reverse Recovery Current 2.4 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Notes: Calculated continuous current based on maximum allowable junction I 75A, di/dt 1730A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 120A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.033mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note AN-994. R = 25 , I = 102A, V =10V. Part not recommended for use GS G AS R is measured at T approximately 90C. J above this value. 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback August 18, 2015