IRFB3607PbF IRFS3607PbF Applications IRFSL3607PbF High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET Uninterruptible Power Supply D High Speed Power Switching V 75V DSS Hard Switched and High Frequency Circuits R typ. 7.34m DS(on) G max. 9.0m Benefits I 80A S D Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and D D D Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S S S D D G G G 2 TO-220AB D Pak TO-262 IRFB3607PbF IRFS3607PbF IRFSL3607PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units 80 I T = 25C Continuous Drain Current, VGS 10V D C 56 I T = 100C Continuous Drain Current, V 10V A D C GS 310 I Pulsed Drain Current DM 140 P T = 25C Maximum Power Dissipation W D C 0.96 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS -55 to + 175 T Operating Junction and C J T Storage Temperature Range STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 120 mJ AS (Thermally limited) I Avalanche Current 46 A AR Repetitive Avalanche Energy 14 E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.045 JC R Case-to-Sink, Flat Greased Surface, TO-220 0.50 C/W CS R Junction-to-Ambient, TO-220 62 JA 2 R 40 JA Junction-to-Ambient (PCB Mount) , D Pak www.irf.com 1 01/20/12 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250 A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.096 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 7.34 9.0 m V = 10V, I = 46A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 115 S V = 50V, I = 46A DS D Q Total Gate Charge 56 84 nC I = 46A g D Q Gate-to-Source Charge 13 V = 38V gs DS Q Gate-to-Drain Mille) Charge 16 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 40 I = 46A, V =0V, V = 10V sync g gd D DS GS Internal Gate Resistance 0.55 R G(int) t Turn-On Delay Time 16 ns V = 49V d(on) DD t Rise Time 110 I = 46A r D t Turn-Off Delay Time 43 R = 6.8 d(off) G t Fall Time 96 V = 10V f GS C Input Capacitance 3070 pF V = 0V iss GS C Output Capacitance 280 V = 50V oss DS C Reverse Transfer Capacitance 130 = 1.0MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 380 V = 0V, V = 0V to 60V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 610 V = 0V, V = 0V to 60V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 80 A MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current 310 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 46A, V = 0V SD J S GS dv/dt Peak Diode Recovery 27 V/ns T = 175C, I = 46A, V = 75V J S DS t Reverse Recovery Time 33 50 ns T = 25C V = 64V, rr J R 39 59 T = 125C I = 46A J F di/dt = 100A/s Q Reverse Recovery Charge 32 48 nC T = 25C rr J 47 71 T = 125C J I Reverse Recovery Current 1.9 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on I 46A, di/dt 1920A/ s, V V , T 175C. SD DD (BR)DSS J Calculated continuous current based on maximum allowable junction Pulse width 400s duty cycle 2%. temperature. Note that current limitations arising from heating of the C eff. (TR) is a fixed capacitance that gives the same charging time oss device leads may occur with some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.12mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom- R = 25 , I = 46A, V =10V. Part not recommended for use GS G AS mended footprint and soldering techniques refer to application note AN-994. above this value. R is measured at T approximately 90C. J 2 www.irf.com