PD - 97001C
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET Power MOSFET
Applications
Key Parameters
High frequency DC-DC converters
V
200 V
Plasma Display Panel DS
V min.
260 V
DS (Avalanche)
Benefits
R max @ 10V m
54
DS(ON)
Low Gate-to-Drain Charge to T max
175 C
J
Reduce Switching Losses
Fully Characterized Capacitance
Including Effective C to Simplify
OSS
Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
2
D Pak TO-262
TO-220AB
Lead-Free
IRFS38N20DPbF IRFSL38N20DPbF
IRFB38N20DPbF
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V 43*
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 30* A
D C GS
I Pulsed Drain Current 180
DM
P @T = 25C Power Dissipation 3.8 W
D A
P @T = 25C Power Dissipation 300*
D C
Linear Derating Factor 2.0* W/C
V Gate-to-Source Voltage 30 V
GS
dv/dt Peak Diode Recovery dv/dt 9.5 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range
C
STG
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm)
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 0.47*
JC
R Case-to-Sink, Flat, Greased Surface 0.50 C/W
CS
R Junction-to-Ambient 62
JA
R Junction-to-Ambient 40
JA
2
* R (end of life) for D Pak and TO-262 = 0.50C/W. This is the maximum measured value after 1000 temperature
JC
cycles from -55 to 150C and is accounted for by the physical wearout of the die attach medium.
Notesthrough are on page 11
www.irf.com 1
09/22/10IRFB/S/SL38N20DPbF
Static @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A
(BR)DSS GS D
V / T Breakdown Voltage Temp. Coefficient 0.22 V/C Reference to 25C, I = 1mA
(BR)DSS J D
R Static Drain-to-Source On-Resistance 0.054 V = 10V, I = 26A
DS(on) GS D
V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A
GS(th) DS GS D
25 V = 200V, V = 0V
DS GS
I Drain-to-Source Leakage Current A
DSS
250 V = 160V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 100 V = 30V
GS
I nA
GSS
Gate-to-Source Reverse Leakage -100 V = -30V
GS
Dynamic @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
g Forward Transconductance 17 S V = 50V, I = 26A
fs DS D
Q Total Gate Charge 60 91 I = 26A
g D
Q Gate-to-Source Charge 17 25 nC V = 100V
gs DS
Q Gate-to-Drain Mille) Charge 28 42 V = 10V,
gd GS
t Turn-On Delay Time 16 V = 100V
d(on) DD
t Rise Time 95 I = 26A
r D
ns
t Turn-Off Delay Time 29 R = 2.5
d(off) G
t Fall Time 47 V = 10V
f GS
C Input Capacitance 2900 V = 0V
iss GS
C Output Capacitance 450 V = 25V
oss DS
C Reverse Transfer Capacitance 73 pF = 1.0MHz
rss
C Output Capacitance 3550 V = 0V, V = 1.0V, = 1.0MHz
oss GS DS
C Output Capacitance 180 V = 0V, V = 160V, = 1.0MHz
oss GS DS
C eff. Effective Output Capacitance 380 V = 0V, V = 0V to 160V
oss GS DS
Avalanche Characteristics
Parameter Min. Typ. Max. Units
E
Single Pulse Avalanche Energy
AS 460 mJ
I Avalanche Current
AR 26 A
E Repetitive Avalanche Energy
AR
390 mJ
V Repetitive Avalanche Voltage
DS (Avalanche)
260 V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
44
(Body Diode) showing the
G
I Pulsed Source Current integral reverse
SM
180
S
(Body Diode) p-n junction diode.
V Diode Forward Voltage 1.5 V T = 25C, I = 26A, V = 0V
SD J S GS
t Reverse Recovery Time 160 240 nS T = 25C, I = 26A
rr J F
Q Reverse RecoveryCharge 1.3 2.0 C di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
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