X-On Electronics has gained recognition as a prominent supplier of IRFS38N20DPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFS38N20DPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFS38N20DPBF Infineon

Name: IRFS38N20DPBF
Brand: Infineon
SKU: IRFS38N20DPBF_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IRFS38N20DPBF electronic component of Infineon

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See Product Specifications

Part No.	IRFS38N20DPBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Datasheet:	IRFS38N20DPBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

IRFS38N20DPBF More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 3.8291 10 : USD 3.4201 100 : USD 2.8043 500 : USD 2.2708 1000 : USD 1.9151	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 4.8422 10 : USD 3.2116 100 : USD 2.5614 250 : USD 2.3256 500 : USD 2.2036 1000 : USD 2.1274	N/A Obsolete

0 MOQ : 5 Multiples : 5	5 : USD 2.4047 50 : USD 2.2043 300 : USD 1.8625	N/A Obsolete

0 MOQ : 5 Multiples : 5	5 : USD 2.4047 50 : USD 2.2043 300 : USD 1.8625	N/A Obsolete

0 Multiples : 1000		N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 3.2442 10 : USD 2.7657 100 : USD 2.3922 250 : USD 2.2756 500 : USD 2.0422	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 2.1786 3 : USD 1.2026 23 : USD 1.1503	N/A Obsolete

0 MOQ : 9 Multiples : 1	9 : USD 7.4807	N/A Obsolete

0 MOQ : 1500 Multiples : 1500	1500 : USD 7.4807 3000 : USD 6.7641	N/A Obsolete

We are delighted to provide the IRFS38N20DPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFS38N20DPBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IRFS38N20DPBF is a high-speed single N-channel MOSFET from Infineon Technologies. It has a low on-resistance of 38 mO, a drain-source breakdown voltage of 200V, and an ultrafast switching times of 45 ns. This MOSFET is ideal for switching in high-frequency DC-DC power converters, power management for large processors and graphics, as well as motor control applications. The package size is Small Footprint DFN-8 (3x3 mm), and it is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 44 A 44 A
Vds - Drain-Source Breakdown Voltage 200 V 200 V
Rds On - Drain-Source Resistance 54 mOhms 54 mOhms
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 320 W 320 W
Mounting Style Smd/Smt Smd/Smt
Package / Case D2PAK D2PAK
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 60 nC 60 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Brand Infineon Infineon
Continuous Drain Current 44 A 44 A
Drain-Source Breakdown Voltage 200 V 200 V
Gate-Source Breakdown Voltage 30 V 30 V
Power Dissipation 320 W 320 W
Rds On 54 Mohms 54 Mohms
Fall Time 47 ns 47 ns
Gate Charge Qg 60 nC 60 nC
Rise Time 95 ns 95 ns
Factory Pack Quantity : 50 50
Typical Turn-Off Delay Time 29 ns 29 ns
Height 2.3 mm 2.3 mm
Length 6.5 mm 6.5 mm
Transistor Type 1 N - Channel 1 N - Channel
Type Smps Mosfet Smps Mosfet
Width 6.22 mm 6.22 mm
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets