97343 IRFS4010-7PPbF HEXFET Power MOSFET Applications D V 100V DSS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply R typ. 3.3m DS(on) High Speed Power Switching G max. 4.0m Hard Switched and High Frequency Circuits I S 190A D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 190 D C GS I T = 100C Continuous Drain Current, V 10V 130 D C GS A I 740 DM Pulsed Drain Current P T = 25C Maximum Power Dissipation 380 W D C 2.5 Linear Derating Factor W/C V V Gate-to-Source Voltage 20 GS 26 dv/dt Peak Diode Recovery V/ns T C Operating Junction and -55 to + 175 J T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 330 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R C/W JC Junction-to-Case 0.40 R Junction-to-Ambient (PCB Mount) 40 JA www.irf.com 1 10/07/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D / T V Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.3 4.0 V = 10V, I = 110A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.1 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 210 S V = 25V, I = 110A DS D Q Total Gate Charge 150 230 nC I = 110A g D Q Gate-to-Source Charge 36 V = 50V gs DS Q Gate-to-Drain Mille) Charge 48 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 102 I = 110A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 19 ns V = 65V d(on) DD t Rise Time 56 I = 110A r D t Turn-Off Delay Time 100 R = 2.7 d(off) G t Fall Time 48 V = 10V f GS C Input Capacitance 9830 V = 0V iss GS C Output Capacitance 650 V = 50V oss DS C Reverse Transfer Capacitance 260 pF = 1.0MHz rss C eff. (ER) 730 V = 0V, V = 0V to 80V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 740 V = 0V, V = 0V to 80V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current A MOSFET symbol S 186 (Body Diode) showing the G I Pulsed Source Current 740 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 110A, V = 0V SD J S GS t Reverse Recovery Time 60 ns T = 25C V = 85V, rr J R 67 T = 125C I = 110A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 150 nC rr J T = 125C 180 J I Reverse Recovery Current 4.7 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.052mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25 , I = 110A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value . When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 110A, di/dt 1310A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. JC 2 www.irf.com