IRFS4020PbF IRFSL4020PbF Features Key Parameters Key parameters optimized for Class-D audio V 200 V DS amplifier applications m R typ. 10V 85 DS(ON) Low R for improved efficiency DSON Q typ. 18 nC g Low Q and Q for better THD and improved Q typ. 6.7 nC G SW sw R typ. 3.2 efficiency G(int) T max 175 C J Low Q for better THD and lower EMI RR 175C operating junction temperature for D D ruggedness D Can deliver up to 300W per channel into 8 load in half-bridge configuration amplifier S S D D G G G 2 D Pak TO-262 S IRFS4020PbF IRFSL4020PbF GD S Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 200 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 18 A D C GS I T = 100C Continuous Drain Current, V 10V 13 D C GS Pulsed Drain Current I 52 DM Power Dissipation P T = 25C 100 W D C Power Dissipation P T = 100C 52 D C Linear Derating Factor 0.70 W/C T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.43 C/W JC Junction-to-Ambient (PCB Mount) R 40 JA Notes through are on page 2 www.irf.com 1 05/14/09 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 85 105 V = 10V, I = 11A DS(on) GS D V Gate Threshold Voltage 3.0 4.9 V V = V , I = 100A GS(th) DS GS D V / T Gate Threshold Voltage Coefficient -13 mV/C GS(th) J I Drain-to-Source Leakage Current 20 A V = 200V, V = 0V DSS DS GS 250 V = 200V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS g Forward Transconductance 24 S V = 50V, I = 11A fs DS D Q Total Gate Charge 18 29 g Q Pre-Vth Gate-to-Source Charge 4.5 V = 100V gs1 DS Q Post-Vth Gate-to-Source Charge 1.4 nC V = 10V gs2 GS Q Gate-to-Drain Charge 5.3 I = 11A gd D Q Gate Charge Overdrive 6.8 See Fig. 6 and 18 godr Q Switch Charge (Q + Q ) 6.7 sw gs2 gd R Internal Gate Resistance 3.2 G(int) t Turn-On Delay Time 7.8 V = 100V, V = 10V d(on) DD GS t Rise Time 12 I = 11A r D t Turn-Off Delay Time 16 ns R = 2.4 d(off) G t Fall Time 6.3 f C Input Capacitance 1200 V = 0V iss GS C Output Capacitance 91 pF V = 50V oss DS C Reverse Transfer Capacitance 20 = 1.0MHz, See Fig.5 rss C eff. Effective Output Capacitance 110 V = 0V, V = 0V to 160V oss GS DS L Internal Drain Inductance 4.5 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 94 mJ AS Avalanche Current I See Fig. 14, 15, 16a, 16b A AR Repetitive Avalanche Energy E mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I T = 25C Continuous Source Current 18 MOSFET symbol S C (Body Diode) A showing the I Pulsed Source Current 52 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 11A, V = 0V SD J S GS t Reverse Recovery Time 82 120 ns T = 25C, I = 11A rr J F Q Reverse Recovery Charge 280 420 nC di/dt = 100A/s rr Repetitive rating pulse width limited by max. junction temperature. R is measured at Starting T = 25C, L = 1.62mH, R = 25 , I = 11A. Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive J G AS Pulse width 400s duty cycle 2%. avalanche information. 2 www.irf.com