IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters V 150V DSS Benefits R max 0.045 DS(on) Low Gate-to-Drain Charge to Reduce Switching Losses I 41A D Fully Characterized Capacitance Including Effective C to Simplify Design, (See App. OSS D D Note AN1001) Fully Characterized Avalanche Voltage and Current S S S S Lead-Free D D D G G G G TO-262 Pak D2 Pak TO-220AB TO-220 Full-Pak IRFSL41N15DPbF IRFS41N15DPbF IRFB41N15DPbF IRFB41N15DPbF G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFB41N15DPbF TO-220 Tube 50 IRFB41N15DPbF IRFSL41N15DPbF TO-262 Tube 50 IRFSL41N15DPbF IRFIB41N15DPbF TO-220 Full-Pak Tube 50 IRFIB41N15DPbF Tube 50 IRFS41N15DPbF IRFS41N15DPbF D2-Pak Tape and Reel Left 800 IRFS41N15DTRLPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 41 D C GS I T = 100C Continuous Drain Current, V 10V 29 A D C GS I Pulsed Drain Current 164 DM P T = 25C Maximum Power Dissipation D2-Pak 3.1 D A P T = 25C Maximum Power Dissipation TO-220 200 D C W P T = 25C Maximum Power Dissipation TO-220 Full-Pak 48 D C Linear Derating Factor TO-220 1.3 W/C Linear Derating Factor TO-220 Full-Pak 0.32 V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 2.7 V/ns T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.75 JC Junction-to-Case, TO-220 Full-Pak 3.14 R JC Case-to-Sink, Flat, Greased Surface 0.50 R CS C/W Junction-to-Ambient,TO-220 62 R JA R Junction-to-Ambient,D2-Pak 40 JA Junction-to-Ambient, TO-220 Full-Pak 65 R JA 1 2017-04-27 IRFB/IB/S/SL41N15DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.17 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.045 V = 10V, I = 25A DS(on) GS D V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GS(th) DS GS D 25 V = 150 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 120V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J gfs Forward Trans conductance 18 S V = 50V, I = 25A DS D Q Total Gate Charge 72 110 I = 25A g D Q Gate-to-Source Charge 21 31 nC V = 120V gs DS Q Gate-to-Drain Charge 35 52 V = 10V GS gd t Turn-On Delay Time 16 V = 75V d(on) DD t Rise Time 63 I = 25A r D ns t Turn-Off Delay Time 25 R = 2.5 d(off) G t Fall Time 14 V = 10V f GS C Input Capacitance 2520 V = 0V iss GS C Output Capacitance 510 V = 25V oss DS C Reverse Transfer Capacitance 110 = 1.0MHz rss pF C Output Capacitance 3090 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 230 V = 0V, V = 120V = 1.0MHz oss GS DS C Effective Output Capacitance 250 V = 0V, V = 0V to 120V oss eff. GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 470 mJ AS I Avalanche Current 25 A AR E Repetitive Avalanche Energy 20 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 41 S (Body Diode) showing the A Pulsed Source Current integral reverse I 164 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 25A,V = 0V SD J S GS t Reverse Recovery Time 170 260 ns T = 25C ,I = 25A rr J F Q Reverse Recovery Charge 1.3 1.9 di/dt = 100A/s C rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. starting T = 25C, L = 1.5mH, R = 25 , I = 25A. J G AS I 25A, di/dt 340A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS This is only applied to TO-220AB package. 2 This is applied to D Pak, when mounted on 1 square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. 2 2017-04-27