IRFB4310 IRFS4310 IRFSL4310 Applications HEXFET Power MOSFET High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply D V 100V DSS High Speed Power Switching 5.6m R typ. Hard Switched and High Frequency Circuits DS(on) G max. 7.0m Benefits Worldwide Best R in TO-220 DS(on) I 140A S D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability G D S G D S G D S 2 D Pak TO-220AB TO-262 IRFS4310 IRFB4310 IRFSL4310 Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 140 A D C GS I T = 100C Continuous Drain Current, V 10V 97 D C GS I Pulsed Drain Current 550 DM P T = 25C 330 Maximum Power Dissipation W D C Linear Derating Factor 2.2 W/C V Gate-to-Source Voltage 20 V GS Peak Diode Recovery 14 dV/dt V/ns T -55 to + 175 Operating Junction and C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 980 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.45 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W CS R Junction-to-Ambient, TO-220 62 JA 2 R 40 Junction-to-Ambient (PCB Mount) , D Pak JA www.irf.com 1 01/20/06 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.064 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.6 7.0 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS R Gate Input Resistance 1.4 f = 1MHz, open drain G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 160 S V = 50V, I = 75A DS D Q Total Gate Charge 170 250 nC I = 75A g D Q Gate-to-Source Charge 46 V = 80V gs DS Q Gate-to-Drain Mille) Charge 62 V = 10V gd GS t Turn-On Delay Time 26 ns V = 65V d(on) DD t Rise Time 110 I = 75A r D t Turn-Off Delay Time 68 R = 2.6 d(off) G t Fall Time 78 V = 10V f GS C Input Capacitance 7670 pF V = 0V iss GS C Output Capacitance 540 V = 50V oss DS C Reverse Transfer Capacitance 280 = 1.0MHz rss C eff. (ER) 650 V = 0V, V = 0V to 80V , See Fig.11 Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 720.1 V = 0V, V = 0V to 80V , See Fig. 5 oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol 140 S D (Body Diode) showing the G I Pulsed Source Current 550 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 45 68 ns T = 25C V = 85V, rr J R 55 83 T = 125C I = 75A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 82 120 nC rr J 120 180 T = 125C J I Reverse Recovery Current 3.3 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. Package limitation current is 75A as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.35mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom R = 25, I = 75A, V =10V. Part not recommended for use mended footprint and soldering techniques refer to application note AN-994. G AS GS above this value. I 75A, di/dt 550A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. 2 www.irf.com