IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
Applications
HEXFET Power MOSFET
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
D
V 100V
DSS
High Speed Power Switching
R typ.
Hard Switched and High Frequency Circuits 5.6m
DS(on)
G
max. 7.0m
I
130A
S
Benefits D
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
S
S S
Lead-Free
D
D D
G
G G
2
D Pak
TO-220AB TO-262
IRFS4310PbF
IRFB4310PbF IRFSL4310PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
I @ T = 25C
Continuous Drain Current, V @ 10V 130 A
D C
GS
I @ T = 100C Continuous Drain Current, V @ 10V 92
D C
GS
I 550
Pulsed Drain Current
DM
P @T = 25C
Maximum Power Dissipation 300 W
D C
Linear Derating Factor 2.0
W/C
V 20 V
Gate-to-Source Voltage
GS
Peak Diode Recovery 14
dV/dt V/ns
T
Operating Junction and -55 to + 175 C
J
T
Storage Temperature Range
STG
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb in (1.1N m)
Avalanche Characteristics
Single Pulse Avalanche Energy
E
980 mJ
AS (Thermally limited)
Avalanche Current
I See Fig. 14, 15, 22a, 22b, A
AR
Repetitive Avalanche Energy
E
mJ
AR
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
Junction-to-Case 0.50
JC
R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W
CS
R Junction-to-Ambient, TO-220 62
JA
2
R 40
JA Junction-to-Ambient (PCB Mount) , D Pak
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01/31/06
Static @ T = 25C (unless otherwise specified)
J
Symbol Parameter Min. Typ. Max. Units Conditions
V
Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A
(BR)DSS
GS D
V /T Breakdown Voltage Temp. Coefficient 0.064 V/C Reference to 25C, I = 1mA
(BR)DSS J
D
R
Static Drain-to-Source On-Resistance 5.6 7.0 V = 10V, I = 75A
DS(on) m
GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
I
Drain-to-Source Leakage Current 20 A V = 100V, V = 0V
DSS
DS GS
250 V = 100V, V = 0V, T = 125C
DS GS J
I
Gate-to-Source Forward Leakage 200 nA V = 20V
GSS
GS
Gate-to-Source Reverse Leakage -200 V = -20V
GS
R Gate Input Resistance 1.4 f = 1MHz, open drain
G
Dynamic @ T = 25C (unless otherwise specified)
J
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 160 S V = 50V, I = 75A
DS D
Q Total Gate Charge 170 250 nC I = 75A
g D
Q
Gate-to-Source Charge 46 V = 80V
gs
DS
Q Gate-to-Drain Mille) Charge 62 V = 10V
gd GS
t
Turn-On Delay Time 26 ns V = 65V
d(on)
DD
t Rise Time 110 I = 75A
r
D
t Turn-Off Delay Time 68 R = 2.6
d(off)
G
t
Fall Time 78 V = 10V
f
GS
C Input Capacitance 7670 pF V = 0V
iss GS
C
Output Capacitance 540 V = 50V
oss
DS
C Reverse Transfer Capacitance 280 = 1.0MHz
rss
C eff. (ER)
650 V = 0V, V = 0V to 80V , See Fig.11
oss Effective Output Capacitance (Energy Related)
GS DS
C eff. (TR)
720.1 V = 0V, V = 0V to 80V , See Fig. 5
Effective Output Capacitance (Time Related)
oss GS DS
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
Continuous Source Current A MOSFET symbol
S 130
D
(Body Diode) showing the
I
Pulsed Source Current 550 integral reverse G
SM
S
(Body Diode) p-n junction diode.
V
Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V
SD
J S GS
t Reverse Recovery Time 45 68 ns T = 25C V = 85V,
rr J R
T = 125C I = 75A
55 83
J F
di/dt = 100A/s
Q Reverse Recovery Charge 82 120 nC T = 25C
rr J
120 180 T = 125C
J
I T = 25C
Reverse Recovery Current 3.3 A
RRM J
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Calculated continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time
oss
as C while V is rising from 0 to 80% V .
temperature. Package limitation current is 75A oss DS DSS
Repetitive rating; pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as
oss
temperature.
C while V is rising from 0 to 80% V .
oss DS DSS
Limited by T , starting T = 25C, L = 0.35mH When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
Jmax J
footprint and soldering techniques refer to application note #AN-994.
R = 25, I = 75A, V =10V. Part not recommended for use
GS
G AS
R is measured at T approximately 90C.
above this value. J
I 75A, di/dt 550A/s, V V , T 175C.
SD DD (BR)DSS J
Pulse width 400s; duty cycle 2%.
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