IRFS4510PbF IRFSL4510PbF HEXFET Power MOSFET D Applications V 100V DSS High Efficiency Synchronous Rectification in SMPS R typ. 11.3m Uninterruptible Power Supply DS(on) High Speed Power Switching G max. 13.9m Hard Switched and High Frequency Circuits I 61A S D (Silicon Limited) Benefits D Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness Fully Characterized Capacitance and Avalanche S S SOA D D G G Enhanced body diode dV/dt and dI/dt Capability 2 Lead-Free D Pak TO-262 IRFS4510PbF IRFSL4510PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 61 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 43 A D C GS I 250 Pulsed Drain Current DM P T = 25C 140 W Maximum Power Dissipation D C 0.95 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS Peak Diode Recovery 3.2 dv/dt V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) in (1.1N m) Mounting torque, 6-32 or M3 screw 10lb Avalanche Characteristics Single Pulse Avalanche Energy E 130 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.05 JC C/W R 40 JA Junction-to-Ambient www.irf.com 1 4/10/12 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 11.3 13.9 V = 10V, I = 37A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 80V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.6 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 100 S V = 25V, I = 37A DS D Q Total Gate Charge 58 87 nC I = 37A g D Q Gate-to-Source Charge 14 V =50V gs DS Q Gate-to-Drain Mille) Charge 18 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 40 I = 37A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 13 ns V = 65V d(on) DD t Rise Time 32 I = 37A r D t Turn-Off Delay Time 28 R =2.7 d(off) G t Fall Time 28 V = 10V f GS C Input Capacitance 3180 pF V = 0V iss GS C Output Capacitance 220 V = 50V oss DS C Reverse Transfer Capacitance 120 = 1.0MHz, See Fig.5 rss C eff. (ER) Effective Output Capacitance (Energy Related) 260 V = 0V, V = 0V to 80V , See Fig.11 oss GS DS C eff. (TR) 325 V = 0V, V = 0V to 80V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 61 A MOSFET symbol D S (Body Diode) showing the G I Pulsed Source Current 250 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 37A, V = 0V SD J S GS t Reverse Recovery Time 54 81 ns T = 25C V = 85V, rr J R 60 90 T = 125C I = 37A J F di/dt = 100A/ s Q Reverse Recovery Charge 95 140 nC T = 25C rr J T = 125C 130 195 J I Reverse Recovery Current 3.3 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.192mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25, I = 37A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value. I 37A, di/dt 1550A/ s, V V , T 175C. When mounted on 1 square PCB (FR-4 or G-10 Material). For recom SD DD (BR)DSS J mended footprint and soldering techniques refer to application note AN-994. Pulse width 400s duty cycle 2%. 2 www.irf.com