IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET Power MOSFET High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply D V 100V DSS High Speed Power Switching 11m R typ. Hard Switched and High Frequency Circuits DS(on) G max. 14m I 73A S D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA S S S Enhanced body diode dV/dt and dI/dt Capability D D D G G G Lead-Free 2 D Pak TO-220AB TO-262 IRFS4610PbF IRFB4610PbF IRFSL4610PbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 73 A D C GS Continuous Drain Current, V 10V I T = 100C 52 D C GS I 290 Pulsed Drain Current DM P T = 25C 190 Maximum Power Dissipation W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS 7.6 Peak Diode Recovery dV/dt V/ns T -55 to + 175 Operating Junction and C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 370 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 16a, 16b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.77 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W CS R Junction-to-Ambient, TO-220 62 JA 2 R 40 Junction-to-Ambient (PCB Mount) , D Pak JA www.irf.com 1 09/16/10 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.085 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 11 14 V = 10V, I = 44A m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS R Gate Input Resistance 1.5 f = 1MHz, open drain G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 73 S V = 50V, I = 44A DS D Q Total Gate Charge 90 140 nC I = 44A g D Q Gate-to-Source Charge 20 V = 80V gs DS Q Gate-to-Drain Mille) Charge 36 V = 10V gd GS t Turn-On Delay Time 18 ns V = 65V d(on) DD t Rise Time 87 I = 44A r D t Turn-Off Delay Time 53 R = 5.6 d(off) G t Fall Time 70 V = 10V f GS C Input Capacitance 3550 pF V = 0V iss GS C Output Capacitance 260 V = 50V oss DS C Reverse Transfer Capacitance 150 = 1.0MHz rss C eff. (ER) 330 V = 0V, V = 0V to 80V , See Fig.11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 380 V = 0V, V = 0V to 80V , See Fig. 5 Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol 73 S D (Body Diode) showing the G I Pulsed Source Current 290 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 44A, V = 0V SD J S GS t T = 25C V = 85V, Reverse Recovery Time 35 53 ns rr J R = 125C I = 44A 42 63 T J F di/dt = 100A/s Q Reverse Recovery Charge 44 66 nC T = 25C rr J T = 125C 65 98 J I Reverse Recovery Current 2.1 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.39mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25 , I = 44A, V =10V. Part not recommended for use GS G AS C while V is rising from 0 to 80% V . oss DS DSS above this value. When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 44A, di/dt 660A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. 2 www.irf.com