Applications HEXFET Power MOSFET Brushed Motor drive applications V 40V D DSS BLDC Motor drive applications R typ. 1.25m DS(on) Battery powered circuits max. 1.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications I 320A D (Silicon Limited) Resonant mode power supplies S I 195A D (Package Limited) OR-ing and redundant power switches DC/DC and AC/DC converters D DC/AC Inverters D Benefits S S D G G Improved Gate, Avalanche and Dynamic dV/dt 2 D Pak TO-262 Ruggedness IRFS7434PbF IRFSL7434PbF Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability GD S Gate Drain Source Lead-Free Ordering Information Standard Pack Base part number Package Type Complete Part Number Form Quantity IRFSL7434PbF TO-262 Tube 50 IRFSL7434PbF Tube 50 IRFS7434PbF IRFS7434PbF D2Pak Tape and Reel Left 800 IRFS7434TRLPbF 5 350 I = 100A D Limited By Package 300 4 250 T = 125C 3 J 200 150 2 100 1 T = 25C J 50 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 320 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 226 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I Pulsed Drain Current 1270 * DM P T = 25C Maximum Power Dissipation 294 W D C Linear Derating Factor 1.96 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics 490 E Single Pulse Avalanche Energy mJ AS (Thermally limited) E Single Pulse Avalanche Energy 1098 AS (Thermally limited) I Avalanche Current A AR See Fig. 14, 15 , 22a, 22b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.5 JC C/W 2 R 40 Junction-to-Ambient (PCB Mount) , D Pak JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 32 mV/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.25 1.6 m V = 10V, I = 100A DS(on) GS D 1.8 m V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 V = 40V, V = 0V DSS DS GS A 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.1 G Pulse width 400s duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A C eff. (TR) is a fixed capacitance that gives the same charging time oss . Note that current limitations arising from as C while V is rising from 0 to 80% V . oss DS DSS heating of the device leads may occur with some lead mounting C eff. (ER) is a fixed capacitance that gives the same energy as oss arrangements. C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L= 1mH, R = 50, I = 47A, V =10V. Jmax J G AS GS Limited by T , starting T = 25C, L = 0.099mH When mounted on 1 square PCB (FR-4 or G-10 Material). Jmax J Please refer to AN-994 for more details: R = 50, I = 100A, V =10V. GS G AS